Page 1
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
STPS1H100A/U
I
F(AV)
V
RRM
1 A
100 V
Tj (max) 175 °C
(max) 0.62 V
V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRE NT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTA GE DROP
SMA
(JEDEC DO-214AC)
STPS1H100A
(JEDEC D O-214 AA )
SMB
STPS1H100U
AVALANCHE R ATE D
DESCRIPTION
Schottky rectifier designed for high frequency
miniature Switched Mode Power Supplies suc h as
adaptators and on board DC/DC converters.
Packaged in SMA or SMB.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Repetitive peak reverse voltage 100 V
RMS forward current 10 A
Average forward current TL = 160°C δ = 0.5 1 A
Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
Repetitive peak reverse current tp = 2 µ square F = 1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 175
°
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
C
dPtot
* :
July 1999 - Ed: 3A
dTj
<
Rth(j−a
1
thermal runaway condition for a diode on its own heatsink
)
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STPS1H100A/U
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j -l)
Junction to lead SMA 30
°
SMB 25
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
1
Tj = 125°C 0.2 0.5 mA
** Forward voltage drop Tj = 25°CI
V
F
Tj = 125°C I
Tj = 25°CI
Tj = 125°C I
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
= 1 A 0.77 V
F
= 1 A 0.58 0.62
F
= 2 A 0.86
F
= 2 A 0.65 0.7
F
To evaluate the maximum conduction losses use the following equation :
P = 0.54 I
F(AV)
+ 0.08 I
F2(RMS )
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
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δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
δ = 1
T
=tp/T
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.2
1.0
0.8
0.6
0.4
tp
0.2
=tp/T
δ
0.0
0 20 40 60 80 100 120 140 160 180
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
T
tp
Tamb(°C)
Rth(j-a)=Rth(j-l)
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STPS1H100A/U
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMB).
IM(A)
10
9
8
7
6
5
4
3
I
M
2
1
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ
=0.5
t(s)
Relative variation of thermal impedance
T a=25°C
T a=75°C
T a=110°C
junction to ambient versus pulse duration (SMB).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
Fig. 4:
Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMA).
IM(A)
8
7
6
5
4
T a=25°C
T a=75°C
3
2
I
M
1
0
1E-3 1E-2 1E-1 1E+0
Fig. 6:
t
δ
=0.5
t(s)
Relative variation of thermal impedance
T a=110°C
junction to ambient versus pulse duration (SMA).
Zth(j-a)/Rth(j-a)
1.00
δ=0.5
δ = 0.2
δ = 0.1
0.10
Single pulse
tp(s)
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 7:
Reverse leakage current versus reverse
δ
T
=tp/T
voltage applied (typical values).
IR(µA)
2E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 102030405060708090100
Tj=125°C
Tj=25°C
VR(V)
δ=0.2
δ=0.1
0.10
δ
=tp/T
T
tp
Single pulse
tp
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 8:
Junction capacitance versus reverse
tp(s)
voltage applied (typical values).
C(pF)
100
50
20
10
1 10 100
VR(V)
F=1MHz
Tj=25°C
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STPS1H100A/U
Fig. 9:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
(SMB).
Rth(j-a) (°C/W)
120
110
100
90
80
70
60
50
40
30
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 11:
Forward voltage drop versus forward
S(Cu) (cm²)
current (maximum values).
IFM(A)
2E+1
1E+1
Tj=125°C
1E+0
Tj=25°C
Fig. 10:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
(SMA).
Rth(j-a) (°C/W)
140
130
120
110
100
90
80
70
60
50
40
30
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(Cu) (cm²)
1E-1
1E-2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM(V)
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Page 5
PACKAGE ME CHANICAL D AT A
SMA
E1
REF.
STPS1H100A/U
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
C
FOOT PRINT
E
L
(in millimeters)
D
A1 1.90 2.70 0.075 0. 106
A2 0.05 0.20 0.002 0. 008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
A1
E1 3.95 4.60 0.156 0.181
A2
b
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
1.65
1.45 1.45
2.40
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STPS1H100A/U
PACKAGE MECHANICAL DAT A
SMB
C
FOOT PRINT
E1
E
L
(in millimeters)
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
D
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
A1
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
A2
b
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
2.3
1.52 2.75
1.52
Ordering type Marking Package Weight Base qty Delivery mode
STPS1H100A S11 SMA 0.068g 5000 Tape & reel
STPS1H100U G11 SMB 0.107g 2500 Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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