Datasheet STPS1H100 Datasheet (ST)

Features

STPS1H100

High voltage power Schottky rectifier

■ Negligible switching losses

■ High junction temperature capability

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Avalanche capability specified

■ ECOPACK2

®

halogen-free component

(SMAflat)

Description

Schottky rectifiers designed for high frequency
miniature switched mode power supplies such as
adaptators and on board DC/DC converters.

Packaged in SMA, SMAflat or SMB.

A

K

SMA

(JEDEC DO-214AC)

(JEDEC DO-214AA)

STPS1H100A

A

K

SMAflat

(JEDEC DO-221AC)

STPS1H100AF

Table 1. Device summary

I

F(AV)

V

RRM

Tj (max) 175 °C

A

K

SMB

STPS1H100U

1 A

100 V

V

(max) 0.62 V

F

September 2008 Rev 6 1/10

www.st.com

10

Characteristics STPS1H100

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

Repetitive peak reverse voltage 100 V

RMS forward voltage 10 A

Average forward current TL = 160 °C δ = 0.5 1 A

Surge non repetitive forward current tp =10 ms sinusoidal 50 A

Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A

Non repetitive peak reverse current tp = 100 µs square 1 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1500 W

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature

j

(1)

175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

1

------------------ --------

<

Rth j a–()

Symbol Parameter Value Unit

SMA 30

R

th(j-l)

Junction to lead

°C/WSMB 25

SMAflat 25

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

j

T

= 125 °C 0.2 0.5 mA

j

T

= 25 °C

j

= 125 °C 0.58 0.62

T

j

T

= 25 °C

j

T

= 125 °C 0.65 0.7

j

To evaluate the conduction losses use the following equation:
P = 0.54 x I

2/10

F(AV)

+ 0.08 I

F2(RMS)

V

R

= 1 A

I

F

= 2 A

I

F

= V

4µA

RRM

0.77

V

0.86

STPS1H100 Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I(A)

F(AV)

1.2

R

1.0

0.8

0.6

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

T

=tp/T

R

=120°C/W

th(j-a)

R

=100°C/W

th(j-a)

R

=200°C/W

th(j-a)

tp

T (°C)

amb

th(j-a)=Rth(j-l)

SMB / SMAflat

SMA

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM j

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values) (SMB)

I (A)

M

10

SMB

9

8

7

6

5

4

3

2

I

M

1

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Ta=25 °C

Ta=75 °C

Ta=110 °C

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values) (SMA)

I (A)

M

8

SMA

7

6

5

4

3

2

I

M

1

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

3/10

Ta=25 °C

Ta=75 °C

Ta=110 °C

Characteristics STPS1H100

)

03

03

Figure 7. Non repetitive surge peak forward

current versus overload duration
(maximum values) (SMAflat)

I(A

M

6

SMAflat

5

4

3

2

I

M

1

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Ta=25 °C

Ta=75 °C

Ta=110 °C

Figure 9. Relative variation of thermal

impedance junction to ambient
versus pulse duration (SMA)

Z/R

th(j-a) th(j-a)

1.00

SMA

Figure 8. Relative variation of thermal

impedance junction to ambient
versus pulse duration (SMB)

Z/R

th(j-a) th(j-a)

1.00

SMB

0.10

Single pulse

t(s)

0.01

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

p

Figure 10. Relative variation of thermal

impedance junction to ambient
versus pulse duration (SMAflat)

Z/R

th(j-a) th(j-a)

1.00

SMAflat

0.10

Single pulse

t(s)

0.01

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

p

Figure 11. Reverse leakage current versus

reverse voltage applied
(typical values)

I (µA)

R

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0 1020 30405060708090100

Tj=125 °C

Tj=25 °C

V (V)

R

0.10

Single pulse

t(s)

0.01

1.E-02 1.E-01 1.E+001.E+01 1.E+02 1.E+

1.E-

p

Figure 12. Junction capacitance versus

reverse voltage applied
(typical values)

C(pF)

100

V (V)

10

1 10 100

R

V

F=1 MHz

OSC

Tj=25 °C

=30 mV

RMS

4/10

STPS1H100 Characteristics

Figure 13. Forward voltage drop versus

forward current (maximum values)

I (A)

FM

100.00

10.00

1.00

0.10

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj=125 °C

Tj=25 °C

V (V)

FM

Figure 15. Thermal resistance junction to

ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA)

Figure 14. Thermal resistance junction to

ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMB)

R (°C/W)

th(j-a)

120

110

100

90

80

70

60

50

40

30

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu)(cm²)

SMB

Figure 16. Thermal resistance junction to

ambient versus copper surface
under each lead (Epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMAflat)

R (°C/W)

th(j-a)

140

130

120

110

100

90

80

70

60

50

40

30

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

S(Cu)(cm²)

R (°C/W)

th(j-a)

SMA

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

S(Cu)(cm²)

SMAflat

5/10

Package information STPS1H100

2 Package information

● Epoxy meets UL94, V0

®

In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.

Figure 17. SMA package dimensions

Dimensions

E1

D

E

A1

C

L

A2

b

Figure 18. SMA footprint dimensions in

millimeters (inches)

1.4

(0.055) (0.055)

2.63

(0.103)

5.43

(0.214)

1.4

1.64

(0.064)

Ref

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.094

A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

c 0.15 0.40 0.006 0.016

D 2.25 2.90 0.089 0.114

E 4.80 5.35 0.189 0.211

E1 3.95 4.60 0.156 0.181

L 0.75 1.50 0.030 0.059

Figure 19. Marking information

Cathode bar (

x x x

y w w

z

unidirectional

e3

devices only )

e3: ECOPACK (Leadfree)
XXX: Marking
Z: Manufacturing location
Y: Year
WW: week

6/10

STPS1H100 Package information

Figure 20. SMB package dimensions

Dimensions

E1

D

E

A1

C

L

A2

b

Figure 21. SMB footprint dimensions in

millimeters (inches)

1.62

2.60

(0.064) (0.102)

5.84

(0.300)

1.62

(0.064)

2.18

(0.086)

Ref

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.40 0.006 0.016

D 3.30 3.95 0.130 0.156

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

L 0.75 1.50 0.030 0.059

Figure 22. Marking information

Cathode bar (

x x x

y w w

z

unidirectional

e3

devices only )

e3: ECOPACK (Leadfree)
XXX: Marking
Z: Manufacturing location
Y: Year
WW: week

7/10

Package information STPS1H100

Table 5. SMAflat dimensions

Dimensions

A

c

D

L 2x

L1 2x

E

E1

L

L2 2x

b

Figure 23. SMAflat footprint dimensions

optimized for SMAflat

5.52

(0.217)

1.20

(0.047)

3.12

(0.123)

millimeters

(inches)

1.20

(0.047)

1.52

(0.060)

(1)

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 0.90 1.10 0.035 0.043

b 1.25 1.65 0.049 0.065

c 0.15 0.40 0.006 0.016

D 2.25 2.95 0.088 0.116

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

L 0.75 1.50 0.030 0.059

L1 0.50 0.019

L2 0.50 0.019

Figure 24. Marking information

Cathode bar (

x x x

y w w

z

unidirectional

e3

devices only )

e3: ECOPACK (Leadfree)
XXX: Marking
Z: Manufacturing location
Y: Year
WW: week

1. SMA footprint may also be used.

8/10

STPS1H100 Ordering information

3 Ordering information

Table 6. Ordering information

Ordering type Marking Package Weight Base qty Delivery mode

STPS1H100A S11 SMA 0.068 g 5000 Tape and reel

STPS1H100U G11 SMB 0.107 g 2500 Tape and reel

STPS1H100AF F11 SMAflat 0.035 g 10 000 Tape and reel

4 Revision history

Table 7. Document revision history

Date Revision Description of changes

Jul-2003 4A Last update.

Aug-2004 5

SMA package dimensions update. Reference A1 max
changed from 2.70 mm (0.106 inc.) to 2.03 mm (0.080 inc).

18-Sep-2008 6 Reformatted to current standards. Added SMAflat package.

9/10

STPS1H100

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