Datasheet STPS16L45CFP Datasheet (SGS Thomson Microelectronics)

Page 1
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
V
(max) 0.45 V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION INSULATED PACKAGE: TO-220FPAB
Insulated voltage: 2000V DC Capacitance: 12 pF
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed for highfrequencySwitchedModePowerSupplies and high frequency DC to DC converters.
ABSOLUTE RATINGS (limiting values, per diode)
2x8A
45 V
STPS16L45CT/CFP
A1
K
A2
A2
K
A1
TO-220AB
STPS16L45CT
TO-220FPAB
STPS16L45CFP
A1
A2
K
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage RMS forward current Average forward current
Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak reverse current tp=2 µs square F=1kHz Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed : 3C
TO-220AB
TO-220FPAB
Tc = 140°C
δ = 0.5
Tc = 125°C
δ = 0.5
Per diode Per device Per diode Per device
thermal runaway condition for a diodeon its own heatsink
−1()
45 V 30 A
8
16
8
16
180 A
1A 2A
4000 W
-65 to+150 °C 150 °C
10000 V/µs
A
A
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STPS16L45CT/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AB
TO-220FPAB
When the diodes 1 and 2 areused simultaneously : Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C V Tj = 125°C
Tj = 125°C I Tj=25°CI Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
R=VRRM
=8A
F
=8A
F
=16A
F
=16A
F
Per diode
Total
Coupling
Per diode
Total
Coupling
th(c)
2.2
°C/W
1.3
0.3
4.5
3.5
2.5
0.2 mA
65 130 mA
0.5 V
0.39 0.45
0.63
0.55 0.64
To evaluate the conduction losses use the following equation : P=0.26xI
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 012345678910
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
0.001
+ 0.024 I
F(AV)
δ = 0.1
δ = 0.05
0.10.01 1
F2(RMS)
δ = 0.2
IF(av) (A)
t (µs)
p
δ = 0.5
δ = 1
T
=tp/T
δ
10 100 1000
tp
Fig. 2: Average current versus ambient temperature (δ = 0.5) (per diode).
IF(av)(A)
9 8 7 6 5 4 3 2 1
=tp/T
δ
0
0 25 50 75 100 125 150
Fig. 4: Normalized avalanche power derating versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
T (°C)
j
TO-220AB
TO-220FPAB
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STPS16L45CT/CFP
Fig. 5-1:Nonrepetitivesurgepeak forward current
versus overload duration (maximum values per diode, TO-220AB).
IM(A)
120 100
80 60 40
IM
20
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB).
Zth(j-c)/Rth(j-c)
1.0
Fig. 5-2: Non repetitive surgepeak forward current versus overload duration (maximum values per diode, TO-220FPAB).
IM(A)
100
90 80 70 60
Tc=25°C
50 40 30
IM
20 10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=50°C
Tc=100°C
Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
Single pulse
tp(s)
1E-4 1E-3 1E-2 1E-1 1E+0
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values) (per diode).
IR(mA)
2E+2 1E+2
1E+1
1E+0
1E-1
1E-2
0 5 10 15 20 25 30 35 40 45
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
tp(s)
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse voltage applied (typical values) (per diode).
C(pF)
2000
1000
500
200
VR(V)
100
12 51020 50
F=1MHz Tj=25°C
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STPS16L45CT/CFP
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
IFM(A)
100.0
10.0
Tj=125°C
Typical values
Tj=150°C
Tj=25°C
1.0
Tj=75°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
PACKAGE MECHANICAL DATA
TO-220FPAB
A
H
L6
L2
L3
L5
L4
G1
G
F1
F2
F
B
Dia
D
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067
L7
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
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STPS16L45CT/CFP
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645typ. L4 13 14 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Ordering type Marking Package Weight Base qty Delivery mode
STPS16L45CT STPS16L45CT TO-220AB 2g 50 Tube
STPS16L45CFP STPS16L45CFP TO-220FPAB 2g 50 Tube
Epoxy meets UL94,V0
Cooling method : C
Recommended torque value : 0.55 m.N
Maximum torque value : 0.70 m.N
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