Datasheet STPS160A, STPS160U Datasheet (SGS Thomson Microelectronics)

®

MAIN PRODUCT CHARACTERISTIC S

STPS160A/U

POWER SCHO TTKY REC TIFIER

I

F(AV)

V

RRM

1 A

60 V

Tj (max) 150°C

(max) 0.57 V

V

F

FEATURES AND BENE FITS

VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
LOW FORWARD V O LTAGE DROP
SURFACE MOUNTED DEVICE

DESCR IPT ION

Single chip Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.

Packaged in SMA or SMB, this device is intended
for surface mounting and used in low voltage, high
frequency inverters, free wheeling and polarity pro­tection applications.

ABSOLUTE RATINGS (limiting values)

SMA

(JEDEC DO-214AC)

STPS160A

SMB

(JEDEC DO-214AA)

STPS160U

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

Repetitive peak reverse voltage 60 V
RMS forward current 10 A
Average forward current T

Surge non repetitive forward current tp = 10 ms

Lead

δ

= 0.5

= 130°C

1A

75 A

Sinusoidal

I

RRM

Repetitive peak reverse current tp = 2 µs square

1A

F = 1kHz

I

RSM

T

stg

Non repetitive peak reverse current tp = 100µs square 1 A
Storage temperature range - 65 to + 150

°

Tj Maximum junction temperature * 150

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

dTj

<

* :

July 1999 - Ed: 5A

1

Rth(j−a

thermal runaway condition for a diode on its own heatsink

)

C

1/6

STPS160A/U

THERMAL RE SISTA NC ES

Symbol Parameter Value Unit

R

th (j -l)

Junction to lead

SMA
SMB

30
23

°

STATIC ELECTRICAL CHARACTE RISTICS

Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit

* Reverse leakage current Tj = 25°CV

I

R

= 60V 4

R

Tj = 125°C 1.1 4 mA

* Forward voltage drop Tj = 25°CI

V

F

Tj = 125°CI
Tj = 25°CI
Tj = 125°CI

Pulse test : * tp = 380 µs, δ < 2%

= 1 A 0.67 V

F

= 1 A 0.49 0.57

F

= 2 A 0.8

F

= 2 A 0.58 0.65

F

To evaluate the maximum conduction losses use the following equation :
P = 0.49 x I

F(AV)

+ 0.08 x I

F2(RMS)

C/W

µ

A

Fig. 1:

Average forward power dissipation versus

average forward current.

PF(av)(W)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

2/6

δ = 0.1

IF(av) (A)

δ = 0.2

δ = 0.5

δ

δ = 1

T

=tp/T

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

1.2

1.0

SMA

0.8

0.6

0.4

tp

0.2

0.0
0 25 50 75 100 125 150

δ

=tp/T

T

tp

Rth(j-a)=100°C/W
S(Cu)=1.5cm²

SMB
Rth(j-a)=80°C/W
S(Cu)=1.5cm²

Tamb(°C)

Rth(j-a)=Rth(j-l)

STPS160A/U

Fig. 3-1:

Non repetive surge peak forward current

versus ove rload duration (maximum va lues) (SMB).

IM(A)

8
7
6
5
4

Ta=25°C

Ta=50°C

3
2

I

M

1
0

1E-3 1E-2 1E-1 1E+0

Fig. 4-1:

t

δ

=0.5

t(s)

Relative variation of thermal impedance

Ta=100°C

junction to ambient versus pulse duration (SMB).

Zth(j-a)/Rth(j-a)

1.0

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

0.9

0.8

0.7

0.6

δ=0.5

0.5

0.4

δ=0.2

0.3

0.2

δ=0.1

0.1

0.0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

Single pulse

tp(s)

δ

=tp/T

T

tp

Fig. 3-2:

Non repetive surge peak forward current

versus ov erload dura tion (maximum v alues) (SMA).

IM(A)

8
7
6
5

Ta=25°C

4
3
2

I

M

1
0

1E-3 1E-2 1E-1 1E+0

Fig. 4-2:

t

δ

=0.5

t(s)

Relative variation of thermal impedance

Ta=50°C

Ta=100°C

junction to ambient versus puls e dur ation (S MA).

Zth(j-a)/Rth(j-a)

1.0

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

0.9

0.8

0.7

0.6

δ=0.5

0.5

0.4

δ=0.2

0.3

0.2

δ=0.1

0.1

0.0
1E-2 1E-1 1E+0 1E+1 1E+2

Single pulse

tp(s)

δ

=tp/T

T

tp

Fig. 5:

Reverse leakage current versus reverse

voltage applied (typical values).

IR(µA)

1E+3

Tj=100°C

1E+2

1E+1

1E+0

1E-1

0 5 10 15 20 25 30 35 40 45 50 55 60

Tj=75°C

Tj=25°C

VR(V)

Fig. 6:

Junction capacitance versus reverse volt-

age applied (typical values)

C(pF)

200

100

50

20

10

1 2 5 10 20 50 100

VR(V)

F=1MHz
Tj=25°C

3/6

STPS160A/U

Fig. 7:

Forward voltage drop versus forward cur-

rent (maximum values).

IFM(A)

1E+1

Tj=125°C

1E+0

1E-1

1E-2

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Fig. 8-2:

Thermal resistance junction to ambient

Tj=25°C

VFM(V)

versus copper surface under each lead (Epoxy
printed circui t board, copper th ickness: 35µm)(SMA ).

Rth(j-a) (°C/W)

140
120
100

80
60
40
20

0

012345

S(Cu) (cm²)

Fig. 8-1:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circ uit board, copper thickness : 35µm)(SM B).

Rth(j-a) (°C/W)

100

80

60

40

20

0

012345

S(Cu) (cm²)

4/6

PACKAGE MECHANICAL DAT A

SMA

STPS160A/U

DIMENSIONS

E1

E

C

L

FOOT PRINT DIMENSIONS

D

A1

A2

( in millimeters)

1.65

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

b

L 0.75 1.60 0.030 0.063

1.45 1.45

2.40

5/6

STPS160A/U

PACKAGE MECHANICAL DAT A

SMB

E1

E

C

L

FOOT PRINT DIMENSIONS

D

A1

A2

( in millimeters)

2.3

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

b

D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063

1.52 2.75

1.52

Ordering type Marking Package Weight Base qty Delivery mode

STPS160A GA6 SMA 0.068 g. 5000 Tape & reel
STPS160U E16 SMB 0.107 g. 2500 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwi se under any patent or patent rights of STMicroel ectronics. Speci fications mentioned in this publ ication are subj ect to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for us e as critical co mpo nents i n l i fe support devices or systems without express written ap­proval of STMicroelectronics.

The ST logo is a registered tr ademark of STMicroel ectronics

© 1999 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

6/6