Datasheet STPS15L60CB Datasheet (SGS Thomson Microelectronics)

®

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

2 x 7.5 A

60 V

Tj (max) 150 °C

V

(max) 0.52 V

F

STPS15L60CB

POWER SCHOTTKY RECTIFIER

A1

K

A2

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

■

LOW FORWARD VOLTAGE DROP

■

LOW THERMAL RESISTANCE

■

AVALANCHE CAPABILITY SPECIFIED

■

DESCRIPTION

Dual center tab Schottky rectifier suited for Switch

K

A2

A1

DPAK

Mode Power Supply and high frequency DC to DC
converters.

Package in DPAK, this device is intended for use
in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

P

ARM

T

stg

Tj

dV/dt

Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C

Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage

δ = 0.5

Per diode
Per device

60 V
10 A

7.5
15
75 A

1A

3700 W

-65 to+175 °C
150 °C

10000 V/µs

A

dPtot

*:

<

dTj Rth j a

July 2003 - Ed : 2A

thermal runaway condition for a diode on its own heatsink

−1()

1/4

STPS15L60CB

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case

Per diode

Total

R

th(c)

Coupling

When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

*

I

R

Reverse leakage current Tj = 25°C V

R=VRRM

Tj = 125°C

V

*

F

Forward voltage drop Tj = 25°CI

Pulse test : * tp = 380 µs, δ <2%

Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I

= 7.5 A

F

= 7.5 A

F

=12A

F

=12A

F

=15A

F

=15A

F

4

°C/W

2.4

0.7

200 µA

45 60 mA

0.62 V

0.52 0.57

0.76

0.62 0.68

0.82

0.66 0.72

To evaluate the conduction losses use the following equation :
P=0.32xI

Fig.1:Conductionlossesversus average current.

F(AV)

+ 0.027 I

F2(RMS)

Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).

PF(av)(W)

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
012345678910

δ = 0.05

δ = 0.2

δ = 0.1

IF(av)(A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 3: Normalized avalanche power derating
versus pulse duration.

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

IF(av)(A)

9

8

7

6

5

4

3

2

1

=tp/T

δ

0

0 25 50 75 100 125 150

Fig. 4: Normalized avalanche power derating

versus junction temperature.

P(t)

ARM p

P (25°C)

ARM

1.2
1

0.8

0.6

0.4

0.2
0

0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

Rth(j-a)=70°C/W

T

tp

Tamb(°C)

T (°C)

j

2/4

STPS15L60CB

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

IM(A)

90

80

70

60

50

40

30

20

IM

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03
0 5 10 15 20 25 30 35 40 45 50 55 60

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2
δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

=tp/T

T

tp

Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).

C(pF)

1000

VR(V)

100

1 10 100

F=1MHz

Vosc=30mV

Tj=25°C

Fig.9: Forward voltagedrop versus forwardcurrent.

IFM(A)

100.0

Tj=125°C

Tj=125°C

(Maximum

(Maximum

values)

10.0

1.0

values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

VFM(V)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

Fig. 10: Thermal resistance junction to ambient ver-

sus copper surface under tab (epoxy printed board
FR4, Cu = 35µm).

Rth(j-a)(°C/W)

100

90
80
70
60
50
40
30
20
10

0

02468101214161820

S(cm²)

3/4

STPS15L60CB

PACKAGE MECHANICAL DATA

DPAK

FOOTPRINT (dimensions in mm)

6.7

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

6.7

3

3

1.61.6

2.32.3

Ordering type Marking Package Weight Base qty Delivery mode

STPS15L60CB S15L60C DPAK 0.30 g 75 Tube

STPS15L60CB-TR S15L60C DPAK 0.30 g 2500 Tape& reel

■

EPOXY MEETS UL94,V0

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