Datasheet STPS15L30CDJF Datasheet (ST)

Page 1
Features
STPS15L30CDJF
Low drop power Schottky rectifier
■ Very small conduction losses
■ Negligible switching losses
■ Low forward voltage drop
■ Low thermal resistance
■ High avalanche capability specified
Description
Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.
Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1
A2
K
A2
A1
PowerFLAT 5x6
STPS15L30CDJF

Table 1. Device summary

K
K
A1
A2
Symbol Value
TM: PowerFLAT is a trademark of STMicroelectronics
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.34 V
V
F
2 x 7.5 A
30 V
May 2011 Doc ID 15664 Rev 4 1/7
www.st.com
7
Page 2
Characteristics STPS15L30CDJF

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
P
T
1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit
Repetitive peak reverse voltage 30 V
RRM
Forward rms current 10 A
Average forward current δ = 0.5 Tc = 140 °C
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
FSM
Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A
RRM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2800 W
ARM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
(1)
Per diode 7.5
Per device 15
A
150 °C
R
R
Junction to case
th(j-c)
Coupling 0.7
th(c)
°C/WTotal 1.6
When diodes 1 and 2 are used simultaneously:
Per diode 2.5
Δ T
(diode 1) = P(diode1) x R
j

Table 4. Static electrical characteristics (per diode)

(per diode) + P(diode 2) x R
th(j-c)
th(c)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage
(1)
I
R
current
(1)
V
Forward voltage drop
F
1. Pulse test: tp = 380 µs, δ < 2%
= 25 °C
T
j
T
= 125 °C - 70 140 mA
j
= 25 °C IF = 7.5 A - - 0.48
T
j
T
= 125 °C IF = 7.5 A - 0.34 0.39
j
T
= 25 °C IF = 15 A - - 0.57
j
= 125 °C IF = 15 A - 0.44 0.51
T
j
= V
V
R
RRM
--1mA
To evaluate the conduction losses use the following equation: P = 0.27 x I
F(AV)
+ 0.016 I
F2(RMS)
V
2/7 Doc ID 15664 Rev 4
Page 3
STPS15L30CDJF Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
P
(W)
F(AV)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012345678910
δ=0.05
δ=0.1
δ=0.2
I
F(AV)
(A)
δ=0.5
δ
=tp/T
δ=1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
(A)
F(AV)
9
8
7
6
5
4
3
2
1
0
T
T
(°C)
tp
=tp/T
δ
0 25 50 75 100 125 150
amb
Figure 4. Normalized avalanche power
derating versus junction temperature
P
ARM (Tj)
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode)
IM(A)
120
110
100
90
80
70
60
50
40
30
I
M
20
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Figure 6. Relative variation of thermal
impedance, junction to case, versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
Tc=25°C
Tc=75°C
Tc=125°C
Doc ID 15664 Rev 4 3/7
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
Page 4
Characteristics STPS15L30CDJF
Figure 7. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
IR(mA)
1.E+03
Tj=150°C
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 5 10 15 20 25 30
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
Figure 9. Forward voltage drop versus
forward current (per diode)
I (A)
FM
20
18
16
14
12
10
8
6
T = 125 °C
j
(Maximum values)
T = 125 °C
j
(Typical values)
4
2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
T = 25 °C
j
(Maximum values)
V (V)
FM
Figure 8. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
1000
V
F=1MHz
osc
Tj=25°C
=30mV
RMS
VR(V)
100
1 10 100
Figure 10. Thermal resistance junction to
ambient versus copper surface under each lead
Rth(j-a)(°C/W)
300
Epoxy printed board FR4 copper thickness = 35 µm
200
100
Scu(mm²)
0
0 200 400 600 800 1000
4/7 Doc ID 15664 Rev 4
Page 5
STPS15L30CDJF Package information

2 Package information

● Epoxy meets UL94,V0
● Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 5. PowerFLAT 5x6 dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
D2
E2
K
b
e
A
A1
D
L
A2
A 0.80 1.00 0.031 0.039
A1 0.02 0.05 0.001 0.002
A2 0.25 0.010
b 0.30 0.50 0.012 0.020
D 5.20 0.205
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
D2 4.11 4.31 0.162 0.170
e 1.27 0.050
E
E 6.15 0.242
E2 3.50 3.70 0.138 0.146
L 0.50 0.80 0.020 0.031
K 1.275 1.575 0.050 0.062

Figure 11. Footprint (dimensions in mm)

5.35
4.41
4.33
3.86
6.29
0.98
0.95
1.27
Doc ID 15664 Rev 4 5/7
0.62
Page 6
Ordering information STPS15L30CDJF

Figure 12. Tape and reel specifications

Dot identifying Pin A1 location
2.0
4.0
Ø 1.55
0.30
12.0
5.30
1.20
All dimensions are typical values in mm

3 Ordering information

0.20
6.30
8.0
User direction of unreeling
1.75
Ø 1.5
5.5
R 0.50

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode
STPS15L30CDJFTR PS15 L30C PowerFLAT 5x6 0.095 g 3000 Tape and reel

4 Revision history

Table 7. Document revision history

Date Revision Changes
13-May-2009 1 First issue.
09-Nov-2009 2 Updated Table 1.
30-Jul-2010 3 Replace Power QFN with PowerFLAT. Updated Figure 9.
18-May-2011 4
Added reference E in Ta bl e 5 . Updated package graphics. Removed dash from order code and updated marking in Ta bl e 6 . Added Figure 12.
6/7 Doc ID 15664 Rev 4
Page 7
STPS15L30CDJF
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Doc ID 15664 Rev 4 7/7
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