Page 1
®
STPS10150CT/CG
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x5A
150 V
Tj 175°C
V
(max) 0.75 V
F
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE CUR-
■
RENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Supplies.
A1
A2
K
D2PAK
STPS10150CG
A1
K
A2
A1
TO-220AB
STPS10150CT
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Repetitive peak reverse voltage 150 V
RMS forward current 10 A
Average forward current
δ = 0.5
TO-220AB
D2PAK
Tc = 155°C per diode
per device
Surge non repetitive forward current tp = 10 ms sinusoidal 120 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 3100 W
Storage temperature range - 65 to + 175 °C
stg
5
10
Tj Maximum operating junction temperature 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
July 2003 - Ed: 5B
A
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STPS10150CT/CG
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ <2%
To evaluate the conduction losses use the following equation:
P = 0.65 I
Junction to case TO-220AB / D2PAK Per diode 4 °C/W
TO-220AB / D
2
PAK Total 2.4
TO-220AB / D2PAK Coupling 0.7
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR=V
th(c)
RRM
2.0 µ A
Tj = 125°C 0.40 2.0 mA
** Forward voltage drop Tj = 25° CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
** tp = 380 µs, δ <2%
+ 0.02 I
F(AV)
F2(RMS)
= 5 A 0.92 V
F
= 5 A 0.69 0.75
F
=10A 1
F
= 10 A 0.79 0.85
F
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
2/5
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
Tamb(°C)
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
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STPS10150CT/CG
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P( t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.1 0.01 1
p
10 100 1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
80
70
60
50
40
30
20
IM
10
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=50°C
Tc=75°C
Tc=125°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P( t )
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0 25 50 75 100 125 150
Tj=175°C
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
200
100
50
20
VR(V)
10
1 2 5 10 20 50 100 200
F=1MHz
Tj=25°C
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Page 4
STPS10150CT/CG
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=125°C
Typical values
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=125°C
Tj=25°C
VFM(V)
PACKAGE MECHANICAL DATA
TO-220AB
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 2 4 6 8 1 01 21 41 61 82 0
S(cm²)
L2
F2
F1
F
G1
H2
Dia
G
L5
L9
L6
L4
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
C
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
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PACKAGE MECHANICAL DATA
2
PAK
D
E
L2
L
L3
A1
B2
B
G
2.0 MIN.
FLAT ZONE
C2
STPS10150CT/CG
DIMENSIONS
A
REF.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.049 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2
V2 0° 8° 0° 8°
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
FOOT PRINT DIMENSIONS (in millimeters)
16.90
10.30
3.70
8.90
5.08
1.30
Ordering type Marking Package Weight Baseqty Delivery mode
STPS10150CT STPS10150CT TO-220AB 2.2 g 50 Tube
STPS10150CG STPS10150CG D
STPS10150CG-TR STPS10150CG D
■
EPOXY MEETS UL94, V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
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2
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & reel
http://www.st.com
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