Datasheet STPS10150C Datasheet (ST)

Page 1
Main product characteristics

STPS10150C

High voltage power Schottky rectifier

I
F(AV)
V
RRM
T
j
(max) 0.75 V
V
F
2 x 5 A
150 V
175° C
Features and benefits
HIgh junction temperature capability
forward voltage drop
Low leakage current
Avalanche capability specified
Insulated package
– TO-220FPAB
Insulating voltage = 2000 V Typical package capacitance 12 pF
Description
Dual center tap schottky rectifier designed for
A1
A2
K
TO-220FPAB
STPS10150CFP
K
A2
A1
D2PA K
STPS10150CG
TO-220AB
STPS10150CT
Order Codes
Part Number Marking
STPS10150CT STPS10150CT
STPS10150CG STPS10150CG
STPS10150CG-TR STPS10150CG
STPS10150CFP STPS10150CFP
A1
K
A1
high frequency Switched Mode Power Supplies.

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
T
dTj
stg
j
Repetitive peak reverse voltage 150
RMS forward voltage 10
Average forward current δ = 0.5
TO-220AB
2
PA K
D
TO-22 0FPAB TC = 145° C Per device 10
= 155° C Per diode 5
T
C
Surge non repetitive forward current tp = 10 ms sinusoidal 120
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3100
Storage temperature range -65 to + 175 ° C
Maximum operating junction temperature
1
------------------ --------
<
Rth j a–()
(1)
175 ° C
A2
K
A2
V
A
A
A
W
June 2006 Rev 6 1/9
www.st.com
9
Page 2
Characteristics STPS10150C

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value Unit
TO-220AB, D
2
PA K
4
Per diode
TO-220FPAB 7
R
th(j-c)
Junction to case
TO-220AB, D
2
PA K
2.4
To t a l
TO-220FPAB 5.3
2
R
th(c)
Coupling
TO-220AB, D
TO-220FPAB 3.7
PA K 0 . 7
When the diodes 1 and 2 are used simultaneously: T
(diode 1) = P(diode 1) x R
j

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ Max. Unit
(1)
I
R
Reverse leakage current
T
T
Tj = 25° C
VF
(2)
Forward voltage drop
T
T
T
1. tp = 5 ms, δ < 2%
= 380 µs, δ < 2%
2. t
p
(Per diode) + P(diode 2) x R
th(j-l)
= 25° C
j
= 125° C 0.40 2.0 mA
j
= V
V
R
RRM
th(c)
2.0 µA
0.92
= 5 A
I
= 125° C 0.69 0.75
j
= 25° C
j
= 125° C 0.79 0.85
j
F
= 10 A
I
F
1
° C/W
V
To evaluate the conduction losses use the following equation: P = 0.65 x I
F(AV)
+ 0.02 I
F2(RMS)
Figure 1. Average forward power
dissipation versus average forward current (per diode)
P(W)
F(av)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
2/9
δ = 0.2
δ = 0.1
I(A)
F(av)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per diode)
I (A)
F(av)
6.0
5.0
4.0
3.0
2.0
1.0
=tp/T
d
0.0 0 25 50 75 100 125 150 175
R
th(j-a)=Rth(j-c)
T
tp
TO-220FPABTO-220FPAB
T (°C)
amb
R
th(j-a)
TO-220AB/D²PAKTO-220AB/D²PAK
=15 °C/W
Page 3
STPS10150C Characteristics
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak
forward current versus overload duration - maximum values, per diode (TO-220AB, D
I(A)
M
80
70
60
50
40
30
20
IM
10
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
2
PAK)
Tc=50°C
Tc=75°C
Tc=125°C
Figure 4. Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
T (°C)
0
j
25 50 75 100 125 150
Figure 6. Non repetitive surge peak forward
current versus overload duration
- maximum values, per diode (TO-220FPAB)
I(A)
M
70
60
50
40
30
20
I
M
10
0
1.E-3 1.E-2 1.E-1 1.E+0
d=0.5
t
t(s)
TC=50 °C
TC=75 °C
TC=125 °C
Figure 7. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220AB, D
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
D²PAK
0.1
1.E-3 1.E-2 1.E-1 1.E+0
tp(s)
2
PAK)
Figure 8. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAB
0.1
0.0
1.E-3 1.E-2 1.E-1 1.E+0 1.E+1
3/9
tp(s)
Page 4
Characteristics STPS10150C
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (µA)
R
1E+5
1E+4
1E+3
Tj=175°C
Tj=150°C
Tj=125°C
1E+2
1E+1
1E+0
1E-1
1E-2
0 25 50 75 100 125 150
Tj=75°C
Tj=25°C
V (V)
R
Figure 11. Forward voltage drop versus
forward current (per diode)
I(A)
FM
100
Tj=125 °C
Tj=125 °C
(Maximum values)
(Maximum values)
10
Tj=125 °C
Tj=125 °C
(Typical values)
(Typical values)
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
(Maximum values)
V(V)
FM
Tj=25 °C
Figure 10. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
1000
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
RMS
100
V (V)
10
1 10 100 1000
R
Figure 12. Thermal resistance, junction to
ambient, versus copper surface under tab - Epoxy printed circuit board, e
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
35 µm (D2PAK only)
cu
S (cm²)
CU
D²PAK
Figure 13. Thermal resistance, junction to
ambient, versus copper surface under tab - Epoxy printed circuit board, e
R (°C/W)
th(j-a)
100
90 80 70 60 50 40 30 20 10
0
0 5 10 15 20 25 30 35 40
4/9
35 µm (TO220FPAB only)
cu
TO220FPAB
S (cm²)
CU
Page 5
STPS10150C Package information

2 Package information

Epoxy meets UL94, V0.
Table 4 . D
2
PAK Dimensions
Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
L2
A
E
C2
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
L
L3
A1
B2
B
G
2.0 MIN. FLAT ZONE
C
A2
R
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
V2
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2

Figure 14. D2PAK footprint dimensions (in mm)

16.90
10.30
8.90
5/9
5.08
1.30
3.70
Page 6
Package information STPS10150C

Table 5. TO-220AB Dimensions

Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
A
C
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
M
E
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
6/9
Page 7
STPS10150C Package information

Table 6. TO-220FPAB Dimensions

Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A
H
B
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
Dia
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
L6
L2
L3
L5
D
F1
L4
F2
F1 1.15 1.70 0.045 0.067
L7
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
G1
F
E
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
G
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
7/9
Page 8
Ordering information STPS10150C

3 Ordering information

Ordering type Marking Package Weight Base qty Delivery mode
STPS10150CT STPS10150CT TO-220AB 2.20 g 50 Tube
STPS10150CG STPS10150CG D2PAK 1.48 g 50 Tube
STPS10150CG-TR STPS10150CG D
2
PAK 1.48 g 1000 Tape and reel
STPS10150CFP STPS10150CFP TO-220FPAB 2.0 g 50 Tube

4 Revision history

Date Revision Description of Changes
Jul-2003 5B Last update.
19-Jun-2006 6
Reformatted to current standard. Added ECOPACK statement. Added TO220FPAB.
8/9
Page 9
STPS10150C
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