Datasheet STPS10120C Datasheet (ST)

Page 1

Table 1. Main product characteristics

I
2 x 5 A
F(AV)
V
120 V
RRM
T
j(max)
0.64 V
V
F(typ)
175° C
STPS10120C
Power Schottky rectifier
A1
K
A2
Feature and benefits
■ High junction temperature capability
■ Good trade-off between leakage current and
■ Low leakage current
■ Avalanche capability specified
■ Insulated package
K
K
A1
TO-220AB
STPS10120CT
A2
A1
TO-220FPAB
STPS10120CFP
– TO-220FPAB
Insulating voltage = 2000 V Typical package capacitance 12 pF

Table 2. Order code

Part number Marking
Description
STPS10120CT STPS10120CT
Dual center tap Schottky rectifier suited for high frequency switch mode power supplies.

Table 3. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Repetitive peak reverse voltage 120 V
RMS forward current 30 A
TO-220AB
Average forward current, δ = 0.5
TO-220FPAB
Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 3000 W
Storage temperature range -65 to + 175 ° C
Maximum operating junction temperature
j
1
--------------------------
<
Rth j a–()
(1)
STPS10120CFP STPS10120CFP
T
= 160° C
c
= 150° C 10
T
c
T
= 150° C
c
T
= 135° C 10
c
Per diode Per device
Per diode Per device
5
5
175 ° C
A2
K
A
July 2007 Rev 1 1/8
www.st.com
8
Page 2
Characteristics STPS10120C

1 Characteristics

Table 4. Thermal parameters

Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Coupling
TO-220AB
TO-220FPAB
Per diode To t al
Per diode To t al
TO-220AB
To t al
TO-220FPAB 3.7
3.8
2.3
6.6
5.2
0.7
° C/W
When the diodes 1 and 2 are used simultaneously : T
(diode 1) = P(diode 1) x R
j

Table 5. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
(per diode) + P(diode 2) x R
th(j-c)
T
= 25° C
j
= 125° C 1 3 mA
T
j
= 25° C
T
j
T
= 125° C 0.64 0.7
j
= 25° C
T
j
T
= 125° C 0.73 0.8
j
V
R
IF = 5 A
= 10 A
I
F
= V
th(c)
6µA
RRM
0.85
0.96
V
To evaluate the maximum conduction losses use the following equation : P = 0.60 x I
2/8
F(AV)
+ 0.02 I
F2(RMS)
Page 3
STPS10120C Characteristics
Figure 1. Average forward power dissipation
versus average forward current (per diode)
P (W)
F(AV)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5, per diode)
I (A)
F(AV)
6
6
5
5
4
4
3
3
2
2
1
1
=tp/T
δ
0
0 25 50 75 100 125 150 175
R =30° C/W
th(j-a)
T
tp
T (°C)
amb
R=R
th(j-a) th(j-c)
TO-220FPAB
TO-220AB
Figure 4. Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode) (TO-220AB)
I (A)
M
90
80
70
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
c
T =75°C
c
T =125°C
c
Figure 6. Non repetitive surge peak forward
current versus overload duration (maximum values, per diode) (TO-220FPAB)
I (A)
M
70
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
3/8
T =25°C
c
T =75°C
c
T =125°C
c
Page 4
Characteristics STPS10120C
Figure 7. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220AB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (µA)
R
1.E+03
T =125°C
j
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 102030405060708090100110120
T =100°C
j
T =75°C
j
T =50°C
j
T =25°C
j
V (V)
R
Figure 8. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
Figure 10. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
1000
100
V (V)
10
1 10 100 1000
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
Figure 11. Forward voltage drop versus
forward current (per diode)
I (A)
FM
200
180
160
140
120
100
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
4/8
T =125°C
j
(maximum values)
T =125°C
j
(typical values)
T =25°C
j
(maximum values)
V (V)
FM
Page 5
STPS10120C Package information

2 Package information

● Epoxy meets UL94, V0
● Cooling method: by conduction (C)
● Recommended torque value: 0.4 to 0.6 Nm

Table 6. TO-220AB dimensions

Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
H2
Dia
L5
L6
L2
F2
F1
F
G1
L9
L4
G
A
C
L7
D
M
E
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
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Page 6
Package information STPS10120C

Table 7. TO-220FPAB dimensions

Dimensions
Ref.
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
A
H
B
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
F1
L4
F2
F
G1
G
D
L7
E
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
6/8
Page 7
STPS10120C Ordering information

3 Ordering information

Table 8. Ordering information

Part number Marking Package Weight Base qty Delivery mode
STPS10120CT STPS10120CT TO-220AB 2.2 g 50 Tube
STPS10120CFP STPS10120CFP TO-220FPAB 2.0 g 50 Tube

4 Revision history

Table 9. Revision history

Date Revision Changes
11-Jul-2007 1 First issue
7/8
Page 8
STPS10120C
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