Datasheet STW8NK80Z, STP8NK80ZFP, STP8NK80Z Datasheet (SGS Thomson Microelectronics)

STP8NK80Z - STP8NK80ZFP

STW8NK80Z

N-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP8NK80Z
STP8NK80ZFP
STW8NK80Z

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GAT E CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VER Y GO OD MANUFACTURING

800 V
800 V
800 V

(on) = 1.3 Ω

DS

DSS

R

DS(on)

< 1.5 Ω
< 1.5 Ω
< 1.5 Ω

I

D

6.2 A

6.2 A

6.2 A

Pw

140 W

30 W

140 W

REPEATIBILITY

DESCRIPTION

The SuperM ESH™ series is obtained through an
extreme optimization of S T’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

3

2

TO-220

1

TO-220FP

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LI GHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP8NK80Z P8NK80Z TO-220 TUBE

STP8NK80ZFP P8NK80ZFP TO-220FP TUBE

STW8NK80Z W8NK80Z TO-247 TUBE

1/11February 2003

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP8NK80Z - STW8NK80Z STP8NK80ZFP

V

V

DGR

V

I
I

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

T

T

() Pulse width limited by safe operating area
(1) I

SD

(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)

DS

Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V

GS

Drain Current (continuous) at TC= 25°C

D

Drain Current (continuous) at TC= 100°C

D

6.2 6.2 (*) A

3.9 3.9 (*) A

800 V
800 V

Drain Current (pulsed) 24.8 24.8 (*) A
Total Dissipation at TC= 25°C

140 30 W
Derating Factor 1.12 0.24 W/°C
Gate source ESD(HBM-C=100pF, R=1.5 KΩ) 4000 V

Insulation Withstand Voltage (DC) - 2500 V

ISO

Operating Junction Temperature

j

Storage Temperature

stg

≤6.2A, di/dt ≤200 A/µs,VDD≤ V

(BR)DSS,Tj≤TJMAX.

-55to150 °C

THERMAL DATA

TO-220 TO-220FP TO-247

Rthj-case Thermal Resistance Junction-case Max 0.89 4.2 0.89 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

°C/W

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25°C, ID=IAR,VDD=50V)

j

max)

j

6.2 A

300 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

Gate-Source Breakdown Voltage

GSO

Igs=± 1 mA (Open Drain) 30 V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them s a fely absorb possible volt age trans ients tha t may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integ rated Zener diodes thus avoid the
usage of external components.

2/11

STP8NK80Z - STP8NK 80ZFP - STW8NK80Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SP ECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100 µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 3.1 A 1.3 1.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 3.1 A 5.2 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

=25V,f=1MHz,VGS= 0 1320

V

DS

143

27

VGS=0,VDS= 640 V 58 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=400V,ID= 3.1 A
RG= 4.7Ω,VGS=10V
(Resistive Load see, Figure 3)

=640V,ID= 6.2 A,

V

DD

V

=10V

GS

17
30

46

8.5
25

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 400 V, ID= 3.1 A
R

=4.7ΩVGS=10V

G

48
28

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

c

= 640V, ID= 6.2 A,

Off-voltage Rise Time

f

Fall Time
Cross-over Time

V

DD

RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)

9
9

18

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 6.2 A, VGS=0
I

SD

VDD=50V,Tj= 150°C
(see test circuit, Figure 5)

= 6.2 A, di/dt = 100 A/µs

460

2990

13

when VDSincreases from 0 to 80%

oss

6.2

24.8

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/11

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Safe Operating Area For TO-220

Thermal Impedance For TO-220

Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP

4/11

Thermal Impedance For TO-247Safe Operating Area For TO-247

STP8NK80Z - STP8NK 80ZFP - STW8NK80Z

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Capacitance VariationsGate Charge vs Gate-so urce Voltage

5/11

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

Normalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Character istics

Normalized On Resistance vs Temp erature

Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

6/11

STP8NK80Z - STP8NK 80ZFP - STW8NK80Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery T imes

Fig. 4: Gate Charge test Circuit

7/11

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/11

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP8NK80Z - STP8NK 80ZFP - STW8NK80Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/11

STP8NK80Z - STP8NK80ZFP - STW8NK80Z

P025P

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429

H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

10/11

STP8NK80Z - STP8NK 80ZFP - STW8NK80Z

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11/11