Datasheet STP8NC50 Datasheet (SGS Thomson Microelectronics)

STP8NC50

STP8NC50FP

N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP

PowerMeshII MOSFET

TYPE V

DSS

R

DS(on)

I

D

STP8NC50 500 V < 0.85 Ω 8A
STP8NC50FP 500 V < 0.85 Ω 8A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 0.7 Ω

DS

DESCRIPTION

The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re­finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGHSPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FORWELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVES

3

2

1

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP8NC50 STP8NC50FP

V

DS

V

DGR

V

GS

I

D

I

D

I

(●)

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

j

(•)Pulse width limitedby safe operating area
(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

500 V

500 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C

8 8(*) A

5.4 5.4(*) A
Drain Current (pulsed) 32 32(*) A
TotalDissipation at TC=25°C

135 40 W

Derating Factor 1 0.32 W/°C

Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD≤8A, di/dt ≤100A/µs, VDD≤ V

(BR)DSS,Tj≤TJMAX.

1/9May 2000

STP8NC50/FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 0.93 3.12 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250 µA, VGS=0

D

= Max Rating

V

DS

=0)

DS

GS

=0)

V

= Max Rating, TC= 125 °C

DS

= ±30V

V

GS

500 V

8A

600 mJ

1 µA

50 µA

±100 nA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On StateDrain Current

V

DS=VGS,ID

= 10V, ID=4A

V

GS

V

DS>ID(on)xRDS(on)max,

= 250µA

VGS=10V

234V

0.7 0.85 Ω

8A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

(1)

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 165 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID=2A

V

= 25V, f = 1 MHz, VGS=0

DS

7.5 S

1050 pF

25 pF

2/9

STP8NC50/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 14 ns
TotalGate Charge

g

Gate-Source Charge 5 nC
Gate-Drain Charge 18.2 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 26 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 8 A

(2)

Source-drain Current (pulsed) 32 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 3.2 µC
Reverse Recovery Current 13.7 A

V

= 250 V,ID=4A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)

V

= 400V,ID=8A,

DD

= 10V

V

GS

V

= 400V,ID=8A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD= 8 A, VGS=0
I

=8 A, di/dt = 100A/µs

SD

= 100V,Tj= 150°C

V

DD

(see test circuit, Figure 5)

19 ns

36 46 nC

13 ns

1.6 V

470 ns

Safe Operating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP8NC50/FP

Thermal Impedence for TO-220FPThermal Impedence for TO-220

Output Characteristics

Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

Gate Charge vs Gate-source Voltage Capacitance Variations

STP8NC50/FP

Normalized Gate Threshold Voltage vs Temp.

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperature

5/9

STP8NC50/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP8NC50/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

7/9

STP8NC50/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

A

mm inch

E

D

8/9

B

L3

L6

L7

¯

H

L2

F1

F

G1

G

F2

123

L4

STP8NC50/FP

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.

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