Datasheet stp80nf70 Datasheet

Features

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Type V

STP80NF70 68 V < 0.0098 Ω 98 A

■ Exceptional dv/dt capability

■ 100% avalanche tested

DSS

DS(on)

max

Application

■ Switching applications

Description

STP80NF70

N-channel 68 V, 0.0082 Ω, 98 A, TO-220

STripFET™ II Power MOSFET

I

D

3

2

1

TO-220

The STP80NF70 is a N-channel Power MOSFET
realized with STMicroelectronics unique
STripFET™ process. It has specifically been
designed to minimize input capacitance and gate
charge. The device is therefore suitable in
advanced high-efficiency switching applications.

Table 1. Device summary

Order code Marking Package Packaging

STP80NF70 80NF70 TO-220 Tube

Figure 1. Internal schematic diagram

June 2010 Doc ID 17610 Rev 1 1/13

www.st.com

13

Contents STP80NF70

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 17610 Rev 1

STP80NF70 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

DM

P

Drain-source voltage (VGS = 0) 68 V

DS

Gate-source voltage ± 20 V

GS

Drain current (continuous) at TC = 25 °C 98 A

I

D

I

Drain current (continuous) at TC=100 °C 68 A

D

(1)

Drain current (pulsed) 392 A

Total dissipation at TC = 25 °C 190 W

TOT

Derating factor 1.27 W/°C

(2)

dv/dt

E

AS

T

1. Pulse width limited by safe operating area.

2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V

3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V.

Peak diode recovery voltage slope 13 V/ns

(3)

Single pulse avalanche energy 700 mJ

Storage temperature

stg

T

Operating junction temperature

J

(BR)DSS

, TJ ≤ T

JMAX.

-55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

T

1. 1.6 mm from case for 10 sec.

Thermal resistance junction-case max 0.79 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering

l

purpose

(1)

300 °C

Doc ID 17610 Rev 1 3/13

Electrical characteristics STP80NF70

2 Electrical characteristics

(T

=25°C unless otherwise specified).

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on
resistance

= 250 µA, VGS= 0

I

D

V

= Max rating,

DS

V

= Max rating @125 °C

DS

= ±20 V

V

GS

= VGS, ID = 250 µA

V

DS

VGS= 10 V, ID= 40 A

68 V

1

10µAµA

±100 nA

23 4V

0.0082 0.0098 Ω

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

Q

Q

Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%.

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

g

Total gate charge
Gate-source charge

gs

Gate-drain charge

gd

= 15 V, ID = 40 A

V

DS

=25 V, f = 1 MHz,

V

DS

= 0

V

GS

= 34 V, ID = 80 A

V

DD

=10 V

V

GS

-60- S

2550

-

550

-

175

75

-

17

-

30

pF
pF
pF

nC
nC
nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

4/13 Doc ID 17610 Rev 1

Turn-on delay time

t

Rise time

r

Turn-off delay time
Fall time

t

f

= 34 V, ID= 40 A,

V

DD

=4.7 Ω, VGS=10 V

R

G

Figure 13 on page 9

17
60

­90

75

ns
ns

­ns

ns

STP80NF70 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current - 98 A

(1)

Source-drain current (pulsed) - 392 A

(2)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

I

I

SD

SD

= 80 A, V

= 80 A,

GS

= 0

di/dt = 100 A/µs,

= 25 V, TJ = 150 °C

V

DD

Figure 15 on page 9

-1.5V

70

-

160

4.7

ns
nC

A

Doc ID 17610 Rev 1 5/13

Electrical characteristics STP80NF70

2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

AM00935v

(A)

Operation in this area is
limited by max R

DS(on)

100

100µs

10

1ms

10ms

1

0.1

0.1

1

10

V

DS

(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

D

(A)

250

VGS=10V

8V

200

7V

AM00936v1

I

D

(A)

250

200

VDS=10V

AM00937v1

150

100

50

150

6V

100

50

5V

0

0

5

10

15

V

DS

(V)

0

2

3 4

5

7

6

8 9

V

GS

(V)

6/13 Doc ID 17610 Rev 1

STP80NF70 Electrical characteristics

Figure 6. Normalized BV

V

BR(DSS)

(norm)

GS

V

D

=250µA

I

=0

vs temperature Figure 7. Static drain-source on resistance

DSS

AM00957v1

R

DS(on)

(mΩ)

9.5

1.2

9

1.1

8.5

1.0

0.9

0.8

-50

100

T

J

0

50

(°C)

7.5

8

7

20

0

40

60

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

(V)

12

VDD=34V

I

D

=80A

10

8

6

4

2

AM00952v1

C(pF)

5000

4000

3000

2000

1000

TJ=25°C

f=1MHz

Crss

80

I

Ciss

Coss

AM00951v1

D

(A)

AM00953v1

0

20

0

40

60

80

Q

g

(nC)

Figure 10. Normalized gate threshold voltage

vs temperature

V

GS(th)

(norm)

1.0

0.9

0.8

0.7

0.6

-50

AM00954v1

VDS=V

GS

ID=250µA

100

T

J

0

50

(°C)

Doc ID 17610 Rev 1 7/13

0

0

10

20

30

40 50 60

Figure 11. Normalized on resistance vs

temperature

R

DS(on)

(norm)

-50

VGS=10V

D

=40A

I

0

50

100

T

1.8

1.4

1.0

0.6

0.2

Q

g

(nC)

AM00955v1

J

(°C)

Electrical characteristics STP80NF70

Figure 12. Source-drain diode forward

characteristics

V

SD

(V)

AM00956v1

1.1

0.9

0.7

0.5

0.3
0

175°C

20

T

J

=-55°C

40

25°C

60

80

I

SD

(A)

8/13 Doc ID 17610 Rev 1

STP80NF70 Test circuits

3 Test circuits

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test

circuit

Figure 17. Unclamped inductive waveform

Doc ID 17610 Rev 1 9/13

Package mechanical data STP80NF70

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

10/13 Doc ID 17610 Rev 1

STP80NF70 Package mechanical data

TO-220 type A mechanical data

Dim

Min Typ Max

mm

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c0.48 0.70
D 15.25 15.75

D1 1.27

E10 10.40
e 2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93
L20 16.40
L3028.90

∅P 3.75 3.85

Q 2.65 2.95

0015988_Rev_S

Doc ID 17610 Rev 1 11/13

Revision history STP80NF70

5 Revision history

Table 8. Document revision history

Date Revision Changes

11-Jun-2010 1 First release.

12/13 Doc ID 17610 Rev 1

STP80NF70

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Doc ID 17610 Rev 1 13/13