Datasheet STB80NF55-06, STB80NF55-06-1, STP80NF55-06, STP80NF55-06FP Datasheet (ST)

STB80NF55-06 STB80NF55-06-1

1

3

3

1

3

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STP80NF55-06 STP80NF55-06FP

N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/I

STripFET™ II POWER MOSFET

TYPE

STB80NF55-06/-1
STP80NF55-06
STP80NF55-06FP

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

DS

V

DSS

55 V
55 V
55 V

(on) = 0.005 Ω

CHARACTERIZATION

■ SURFACE-MOUNTING D

POWER PACKAGE IN TU BE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low on­resistance, rugged ava lanche characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

R

DS(on)

<0.0065

Ω

<0.0065 Ω
<0.0065 Ω

2

PAK (TO-263)

I

D

80 A
80 A
60 A

TO-220FP

2

2

PAK

1

²

I

TO-262

(Suffix “-1”)

INTERNAL SCHEMATIC DIAGRAM

²

PAK/D²PAK

TO-220

1

D²PAK

TO-263

(Suffix “T4”)

2

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

■ DC-DC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STB80NF55-06/-1

STP80NF55-06

I

V

DM

V

DGR

V

I
I

P

DS

GS

D
D

(•)

tot

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C

80 60 A

80 42 A
Drain Current (pulse d) 320 240 A
Total Dissipation at TC = 25°C

300 45 W

Derating Factor 2 0.30 W/°C

(1)

dv/dt

E

AS

V

ISO

T

stg

T

j

(•) Pulse width limited by safe operating area. (1) I

NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55-06 @ B80NF55-06 @ P80NF55-06 @

Peak Diode Recove ry vo ltag e slo pe 7 V/ns

(2)

Single Pulse Avalanche Energy 1.3 J
Insulation Withstand Voltage (DC) ------ 2500 V
Storage Temperature
Operating Junction Temperature

≤80A, di/dt ≤400A/µs, VDD ≤ V

SD

(2) Starting Tj = 25 oC, ID = 40A, VDD= 35V

STP80NF55-06FP

55 V
55 V

-55 to 175 °C

, Tj ≤ T

(BR)DSS

JMAX

1/12February 2004

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

THERMAL DATA

D2PAK/I2PAK/

TO-220

Rthj-case Thermal Resistance Junction-case Max 0.5 3.33 °C/W

Rthj-amb

T

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max 62.5

TO-220FP

300

°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

= Max Rating TC = 125°C

V

DS

= ± 20 V

V

GS

55 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS ID = 250 µA

DS

V

= 10 V ID = 40 A

GS

234V

0.005 0.0065

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 15 V ID=40 A

DS

V

= 25V, f = 1 MHz, VGS = 0

DS

150 S

4400
1020

350

µA
µA

Ω

pF
pF
pF

2/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Source-drain Curre nt

(•)

Source-drain Curre nt (pu lse d)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

= 27 V ID = 40 A

DD

=4.7 Ω VGS = 10 V

R

G

(Resistive Load, Figu re 3)
V

= 44 V ID= 80 A VGS= 10V

DD

V

= 27 V ID = 40 A

DD

=4.7Ω, V

R

G

GS

= 10 V

(Resistive Load, Figu re 3)

I

= 80 A VGS = 0

SD

I

= 80 A di/dt = 100A/µs

SD

= 35 V Tj = 150°C

V

DD

(see test circuit, Figure 5)

27

155

142

29

60.5

125

65

100

0.32

6.5

193 nC

80

320

1.5 V

ns
ns

nC
nC

ns
ns

A
A

ns

µC

A

Safe Operating Area for TO-220FPSafe Operating Area for TO-220

3/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

Gate Charge vs Gate-so urc e Vol tag e Capacitance Variations

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

5/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

D2PAK MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.016
V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

7/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

P011P5/E

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STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.40 2.70 0.094 0.106

H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

9/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

10/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

D2PAK FOOTPRINT

TAPE AND REEL SH IPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R 50 1.574

T 0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

BASE QTY BULK QTY

1000 1000

11/12

STB80NF55-06/-1 STP80NF55-06 STP80NF55-06FP

I

s

o

d

b

ct

t

ot

a

nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence

f use of such information nor for any infrin gement of patents or other rights of third parties which may resul t from its use. No license is grant e
y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subje

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