Page 1
N - CHANNEL 100V- 0.014Ω - 80A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
DSS
ST P80NF10 100 V < 0.0 18 Ω 80 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.014 Ω
CHARACTERIZATION
R
DS(on)
I
STP80NF10
PRELIMINARY DATA
D
DESCRIPTION
This MOSFET series realized with
3
2
1
STMicroelectronicsunique STripFET process has
specifically been designed to minimize input
TO-220
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applicationswith low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
E
AS
T
(•) Pulse widthlimited by safe operating area (2) startingTj = 25oC, ID=80A, VDD=50V (1)ISD
April 2000
Dra in- sour c e Volta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Cu rr ent (cont inuous) at Tc=25oC80A
I
D
Dra in Cu rr ent (cont inuous) at Tc= 100oC50A
I
D
(•) Dra in Cu rr ent (pulsed) 320 A
Tot al Dissipation at Tc=25oC 210 W
tot
Der ati ng F a c tor 1.4 W/
1 ) Peak Diode R ecovery volt a ge slope 9 V/ ns
(2) Single Pulse Av alan c he En er gy 245 mJ
St orage T emperat ur e -65 to 175
stg
Max. Operating Jun c t ion Tem pe ra tur e 175
T
j
≤ 68 A,di/dt ≤ 300A/ms, VDD
≤V
(BR)DSS
,Tj≤T
JMA
o
C
o
C
o
C
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STP80NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tempe ra t ure For Solder ing Purpose
l
0.71
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s ource On
VGS=10V ID= 40 A 0.014 0. 01 8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=40 A 20 S
VDS=25V f=1MHz VGS= 0 4300
600
240
µA
µ
pF
pF
pF
A
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STP80NF10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay T ime
Rise Tim e
t
r
VDD=50V ID=40A
R
=4.7
G
Ω
VGS=10V
40
145
(Resis t iv e Load, s ee fig. 3 )
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=80V ID=80A VGS= 10 V 140
23
51
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Dela y T im e
t
Fall T ime
f
VDD=27V ID=40A
=4.7 Ω VGS=10V
R
G
134
115
(Resis t iv e Load, s ee fig. 3 )
t
d(off)
Off-voltage Rise Time
t
Fall T ime
f
t
Cross-over Time
c
Vclamp = 80 V ID=80A
=4.7 Ω VGS=10V
R
G
(Indu ct iv e Load , se e f ig. 5)
111
125
185
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗)Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
80
320
(pulsed)
(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 80 A di/dt = 100 A/µs
=50V Tj=150oC
V
DD
(see test circuit, fig. 5)
155
850
Charge
Reverse Recovery
11
Current
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
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STP80NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
ResistiveLoad
Fig. 2: Unclamped InductiveWaveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
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Page 5
TO-220 MECHANICAL DATA
STP80NF10
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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STP80NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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