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STP70NF03L
N-CHANNEL 30V - 0.008
Ω
- 70A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
= 0.008 Ω
■ TYPICALQ
g
= 35 nC @ 10V
■ OPTIMAL R
DS(on)xQg
TRADE-OFF
■ CONDUCTIONLOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
APPLICATIONS
■ SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Dra in- sour c e Volt age (VGS=0) 30 V
V
DGR
Dra in- gate V ol t age ( RGS=20kΩ)30V
V
GS
Gat e-source Voltage
±
20 V
I
D
Dra in C u rr ent (c ontinuous) a t Tc=25oC70A
I
D
Dra in C u rr ent (c ontinuous) a t Tc=100oC50A
I
DM
(•) Drain Cu rrent (p ulsed) 280 A
P
tot
Tot al Dissipation at Tc=25oC 100 W
Der ati ng Fac t or 0.67 W/
o
C
T
stg
St orage Temperature -65 t o 175
o
C
T
j
Max. O perating Junction T emper at ure 175
o
C
(•) Pulse width limited by safeoperating area
TYPE V
DSS
R
DS(on)
I
D
ST P70NF03L 30 V < 0. 01 Ω 70 A
1
2
3
TO-220
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THERMAL DATA
R
thj-case
R
thj-amb
T
l
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Te m pe ra tur e For So lder ing Purpose
1.5
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Break dow n V o lt age
ID=250µAVGS=0 30 V
I
DSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
1
10
µA
µ
A
I
GSS
Gat e- bod y L eakage
Current (V
DS
=0)
V
GS
= ± 20 V ± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID= 250 µA12.5V
R
DS(on)
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=35A
V
GS
=4.5V ID=35A
0.008
0.011
0.01
0.014
Ω
Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)ma x
VGS=10V
70 A
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansc on duc tance
VDS>I
D(on)xRDS(on)ma xID
=35 A 40 S
C
iss
C
oss
C
rss
Input Capac i t ance
Out put Capacitanc e
Reverse Tr ansfer
Capacit a nc e
VDS=25V f=1MHz VGS= 0 1650
800
170
pF
pF
pF
STP70NF03L
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ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
r
Tur n-on Delay Tim e
Rise Ti me
VDD=15V ID=35A
R
G
=4.7
Ω
VGS=4.5V
(Resis t iv e Loa d, s ee fig. 3)
20
350
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gat e Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=24V ID=46A VGS=10V 35
5
10
45 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
t
f
Tur n-of f Delay Tim e
Fall T ime
VDD=15V ID=35A
R
G
=4.7
Ω
VGS=4.5V
(Resis t iv e Loa d, s ee fig. 3)
35
65
ns
ns
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
70
280
A
A
V
SD
(∗)ForwardOnVoltage ISD=70 A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 70 A di/dt = 100 A /µs
V
DD
=15V Tj=150oC
(see test circuit, fig. 5)
70
105
2.4
ns
nC
A
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
STP70NF03L
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Fig. 1:
UnclampedInductiveLoad Test Circuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductive Waveform
Fig. 4: Gate Chargetest Circuit
Fig. 5:
Test CircuitFor InductiveLoad Switching
And Diode Recovery Times
STP70NF03L
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP70NF03L
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Information furnishedis believed tobeaccurateand reliable.However, STMicroelectronics assumes no responsibilityforthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.This publication supersedes andreplacesall information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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STP70NF03L
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