Datasheet STP80NE03L-06 Datasheet (SGS Thomson Microelectronics)



STP80NE03L-06

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST P80NE03L- 06 30 V < 0.006 Ω 80 A

■ TYPICALR

■ EXCEPTIONALdv/dtCAPABILITY

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE 100

■ APPLICATIONORIENTED

DS(on)

= 0.005 Ω

o

C

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-ACCONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc. )

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt Peak Diode Recovery voltage sl ope 7 V/ ns

T

(•) Pulse width limited by safe operating area (1)ISD≤ 80 A, di/dt ≤ 300 A/µs, VDD≤ V

February 2000

Dra in- sour c e Volt age (VGS=0) 30 V

DS

Dra in- gat e Voltage (RGS=20kΩ)30V

DGR

Gat e-source Voltage ± 22 V

GS

I

Dra in Cu rr ent ( c ont inuous) at Tc=25oC80A

D

I

Dra in Cu rr ent ( c ont inuous) at Tc=100oC60A

D

(•) D rain Current ( p uls ed ) 320 A

Tot al Dis s ipation at Tc=25oC 150 W

tot

Derating Factor 1 W/

St orage Temper at ure -65 to 175

stg

T

Max. Operating Junc t ion Temperat ur e 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/8

STP80NE03L-06

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T e mperature For Soldering P urp os e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanc he E nergy

AS

(starting T

=25oC, ID=IAR,VDD=15V)

j

max,δ <1%)

j

1

62.5

0.5

300

80 A

600 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=40A

=5V ID=40A

V

GS

On StateDrain Current VDS>I

D(on)xRDS(on)ma x

0.005 0.006

0.009

80 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)ma xID

=40 A 30 50 S

VDS=25V f=1MHz VGS= 0 6500

1500

500

8700
2000

700

µ
µA

Ω

pF
pF
pF

A

2/8

STP80NE03L-06

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=15V ID=40A
R

G

=4.7

Ω

VGS=5V

40

26055350

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate C harge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=80A VGS=5V 95

30
44

130 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

r(Voff)

t

t

Off-voltage Ris e Time
Fall T ime

f

Cross-over Time

c

VDD=24V ID=80A

=4.7 Ω VGS=5V

R

G

(see test circuit, figure 5)

70
165
250

95
220
340

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

80
320

(pulsed)

(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 80 A di/dt = 100 A/µs

=15V Tj= 150oC

V

DD

(see test circuit, figure 5)

75

0.14
Charge
Reverse Recovery

4

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area for ThermalImpedance

3/8

STP80NE03L-06

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STP80NE03L-06

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode ForwardCharacteristics

NormalizedOn Resistancevs Temperature

5/8

STP80NE03L-06

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/8

TO-220 MECHANICALDATA

STP80NE03L-06

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/8

STP80NE03L-06

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.This publication supersedes andreplaces all information previouslysupplied.STMicroelectronics products
are not authorized for use as critical components in life support devicesor systemswithout express written approval of STMicroelectronics.

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