Datasheet STP7NK40ZFP, STP7NK40Z, STD7NK40Z-1, STD7NK40Z Datasheet (SGS Thomson Microelectronics)

STP7NK40Z - STP7NK40ZFP

STD7NK40Z - STD7NK40Z-1

N-CH A NNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP7NK40Z
STP7NK40ZFP
STD7NK40Z
STD7NK40Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv /d t C APABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPAC ITANCES

■ VERY GOOD MANUFACTURING

400 V
400 V
400 V
400 V

(on) = 0.85 Ω

DS

DSS

R

DS(on)

< 1 Ω
< 1 Ω
< 1 Ω
< 1 Ω

I

D

5.4 A

5.4 A

5.4 A

5.4 A

Pw

70 W
25 W
70 W
70 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series c om pl e­ments ST full range of high voltage MOSFE Ts in­cluding revolutionary MDmesh™ products.

TO-220 TO-220FP

3

1

DPAK

IPAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LIN E POWER SUPPL I ES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP7NK40Z P7NK40Z TO-220 TUBE
STP7NK40ZFP P7NK40ZFP TO-220FP TUBE
STD7NK40ZT4 D7NK40Z DPAK TAPE & REEL

STD7NK40Z-1 D7NK40Z IPAK TUBE

1/13September 2002

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP7NK40Z STP7NK40ZFP

V

I

V

V

DM

P

DS

DGR

GS

I

D

I

D

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

400 V
400 V

Gate- source Voltage ± 30 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

(l)

Drain Current (pulsed) 21.6 21.6 (*) 21.6 A
Total Dissipation at TC = 25°C

5.4 5.4 (*) 5.4 A

3.4 3.4 (*) 3.4 A

70 25 70 W

Derating Factor 0.56 0.2 0.56 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

(l) Pulse wi dth limited by safe operating area
(1) I

≤5.4A, di/dt ≤200A/µs, VDD ≤ V

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

-55 to 150

-55 to 150

STD7NK40Z

STD7NK40Z-1

°C
°C

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

DPAK

IPAK

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

5.4 A

130 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/13

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID =1 mA, VGS = 0 400 V

Breakdown Voltage

I

I

V

R

DSS

GSS

GS(th)
DS(on)

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS = Max Rating, TC = 125 °C

V

= ± 20V ±10 µA

GS

V

= VGS, ID = 50µA

DS

3 3.75 4.5 V

1

50

VGS = 10V, ID = 2.7 A 0.85 1 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS =15 V, ID= 2.7 A 3.5 S

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

= 25V, f = 1 MHz, VGS = 0 535

V

DS

82
18

VGS = 0V, VDS = 0V to 400V 53 pF

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD = 200 V, ID = 2.7 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)

= 320V, ID = 5.4 A,

V

DD

VGS = 10V

15
15

19
10

26 nC

4

µA
µA

pF
pF
pF

ns
ns

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD = 200 V, ID = 2.7A
RG=4.7Ω VGS = 10 V

30
12

(Resistive Load see, Figure 3)

t

r(Voff)

t

t

= 320V, ID = 5.4A,

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

V

DD

RG=4.7Ω, V

GS

= 10V

(Inductive Load see, Figure 5)

12
10
20

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

V

.

DSS

ISD = 5.4 A, VGS = 0
I

SD

V
(see test circuit, Figure 5)

= 5.4 A, di/dt = 100A/µs

= 50V, Tj = 150°C

DD

220
990

9

when VDS increase s fr om 0 to 80%

oss

5.4

21.6

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/13

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK

Thermal Impedance For TO-220/DPAK/IPAK

Output Characteristics

Thermal Impedance For TO-220FP

Transfer Characteristics

4/13

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

Static Drain-source On ResistanceTrans c onductance

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized On Resistance vs Temperatur eNormalized Gate Threshold Volta ge vs Temp.

5/13

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

6/13

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/13

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

E

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/13

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/13

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

10/13

P032P_B

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

TO-251 (IPAK) MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

0068771-E

11/13

STP7NK40Z - STP7NK40ZFP - S TD7N K40Z - STD7NK40Z-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

are in millimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inc h

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16 .3 0.618 0.641

* on sales type

12/13

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STP7NK40Z - STP7NK40Z FP - STD7NK40Z - STD7NK40Z-1

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