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STP7NA40
STP7NA40FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.82 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP 7NA40
STP 7NA40FI
400 V
400 V
<1Ω
<1Ω
6.5 A
4.1 A
1
2
3
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P7NA40 ST P7NA40FI
V
DS
Drain - s ource Voltage (VGS=0) 400 V
V
DGR
Drain - gat e Voltage (RGS=20kΩ)400V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc=25oC6.54.1A
I
D
Drain Current (continuous) at Tc=100oC4.1 2.6A
I
DM
(•) Drain Current (pulsed) 26 26 A
P
tot
Total Di ssipation at Tc=25oC 100 40 W
Derat ing Factor 0.8 0.32 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 2000 V
T
stg
St or a ge Tem perature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
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THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance J unction- c ase Max 1.25 3.12
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead T emperature For Solder in g Purp os e
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
6.5 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=50V)
210 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
8.4 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
4.1 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 400 V
I
DSS
Zer o Gate Volt age
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leak age
Current (V
DS
=0)
V
GS
= ± 30 V ± 100 nA
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=3.5A 0.82 1 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
6.5 A
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=3.5A 3.1 4.6 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 700
120
31
900
160
43
pF
pF
pF
STP7NA40/FI
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=200V ID=3.5A
RG=47 Ω VGS=10V
(see test circuit, figure 3)
25
75
35
100
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=320V ID=7A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
220 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 320 V ID=7A VGS=10V 34
7
15
45 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=320V ID=7A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
40
25
75
55
35
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Min. Typ. M ax. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
6.5
26
A
A
V
SD
(∗) F or w ar d On Voltage ISD=6.5A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=7A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
380
4.8
25
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP7NA40/FI
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Thermal ImpedeanceFor TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP7NA40/FI
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Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP7NA40/FI
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Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode ForwardCharacteristics
STP7NA40/FI
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Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP7NA40/FI
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP7NA40/FI
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP7NA40/FI
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement ofpatents or other rights of third parties which may results fromits use. No
licenseis grantedby implication orotherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject tochange withoutnotice. Thispublicationsupersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronicsproducts are notauthorizedfor use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics - Printedin Italy- AllRightsReserved
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
Australia- Brazil -Canada -China- France- Germany - Hong Kong- Italy - Japan- Korea- Malaysia - Malta- Morocco- TheNetherlands -
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.
STP7NA40/FI
10/10
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