Page 1
Features
3#
$4!"OR
'
3
R
Type V
STP75NF68 68 V < 0.014 Ω 80 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
DSS
DS(on)
max
Application
■ Switching applications
Description
STP75NF68
N-channel 68 V, 0.010 Ω, 80 A, TO-220
STripFET™ II Power MOSFET
I
D
3
2
1
TO-220
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable in advanced high-efficiency switching
applications.
Table 1. Device summary
Order code Marking Package Packaging
STP75NF68 75NF68 TO-220 Tube
Figure 1. Internal schematic diagram
August 2008 Rev 2 1/12
www.st.com
12
Page 2
Contents STP75NF68
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/12
Page 3
STP75NF68 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
DM
P
Drain-source voltage (VGS = 0) 68 V
DS
Gate-source voltage ± 20 V
GS
Drain current (continuous) at TC = 25 °C 80 A
I
D
I
Drain current (continuous) at TC=100 °C 56 A
D
(1)
Drain current (pulsed) 320 A
Total dissipation at TC = 25 °C 190 W
TOT
Derating factor 1.27 W/°C
(2)
dv/dt
E
AS
T
1. Pulse width limited by safe operating area
2. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V
3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V
Peak diode recovery voltage slope 13 V/ns
(3)
Single pulse avalanche energy 700 mJ
Storage temperature -55 to 175 °C
stg
T
Operating junction temperature 175 °C
J
, TJ ≤ T
(BR)DSS
JMAX
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
1. 1.6mm from case for 10 sec
Thermal resistance junction-case max 0.79 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
Maximum lead temperature for soldering
l
purpose
(1)
300 °C
3/12
Page 4
Electrical characteristics STP75NF68
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250 µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125 °C
DS
= ±20 V
V
GS
= VGS, ID = 250 µA
V
DS
VGS= 10 V, ID= 40 A
68 V
1
10µAµA
±100 nA
23 4V
0.010 0.014 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
V
= 15 V, ID = 40 A
DS
=25 V, f = 1 MHz,
V
DS
V
= 0
GS
VDD = 34 V, ID = 80 A
=10 V
V
GS
60 S
2550
550
175
75
17
30
pF
pF
pF
nC
nC
nC
4/12
Page 5
STP75NF68 Electrical characteristics
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
= 34 V, ID= 40 A,
V
DD
=4.7 Ω, VGS=10 V
R
G
Figure 13 on page 8
17
60
90
75
ns
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 80 A
(1)
Source-drain current (pulsed) 320 A
(2)
Forward on voltage
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
I
I
SD
SD
= 80 A, V
= 80 A,
GS
= 0
di/dt = 100 A/µs,
= 25 V, TJ = 150 °C
V
DD
Figure 15 on page 8
70
160
4.7
1.5 V
ns
µC
A
5/12
Page 6
Electrical characteristics STP75NF68
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
AM00935v1
(A)
Operation in this area is
limited by max R
DS(on)
100
100µs
10
1ms
10ms
1
0.1
0.1
1
10
V
DS
(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
I
D
(A)
250
VGS=10V
8V
200
7V
AM00936v1
I
D
(A)
250
200
VDS=15V
AM00937v1
150
100
6V
50
5V
0
0
Figure 6. Normalized BV
V
BR(DSS)
(norm)
5
GS
V
D
=250µA
I
=0
10
DSS
15
V
DS
(V)
vs temperature Figure 7. Static drain-source on resistance
AM00957v1
1.2
1.1
1.0
0.9
0.8
-50
0
50
100
T
J
(°C)
R
150
100
50
DS(on)
(Ω)
10.5
10
9.5
8.5
0
1
0
3 4
2
5
7
6
V
GS
(V)
AM00951v1
9
8
20
0
40
60
80
I
D
(A)
6/12
Page 7
STP75NF68 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
V
GS
AM00952v1
(V)
12
VDD=34V
I
D
=80A
10
8
6
4
2
0
20
0
40
60
80
Q
g
(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
V
GS(th)
(norm)
1.0
0.9
VDS=V
GS
ID=250µA
AM00954v1
C(pF)
TJ=25°C
5000
f=1MHz
4000
3000
Ciss
2000
Crss
1000
0
0
10
20
30
40 50 60
Coss
Figure 11. Normalized on resistance vs
temperature
R
DS(on)
(norm)
1.8
1.4
VGS=10V
D
=40A
I
AM00953v1
Q
g
(nC)
AM00955v1
0.8
0.7
0.6
-50
0
50
100
T
J
(°C)
Figure 12. Source-drain diode forward
characteristics
V
SD
(V)
1.1
0.9
0.7
0.5
175°C
0.3
0
20
T
J
=-55°C
40
25°C
60
80
AM00956v1
I
SD
(A)
1.0
0.6
0.2
-50
100
T
J
0
50
(°C)
7/12
Page 8
Test circuits STP75NF68
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform
8/12
Page 9
STP75NF68 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Page 10
Package mechanical data STP75NF68
TO-220 mechanical data
Dim
Min Typ Max Min Typ Max
mm inch
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.49 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P 3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
10/12
Page 11
STP75NF68 Revision history
5 Revision history
Table 8. Document revision history
Date Revision Changes
24-Jul-2008 1 First release
06-Aug-2008 2 Document status promoted from preliminary data to datasheet
11/12
Page 12
STP75NF68
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Loading...