Datasheet STP6NB50FP, STP6NB50 Datasheet (SGS Thomson Microelectronics)

STP6NB50

STP6NB50FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE V

STP6NB50
STP6NB50FP

■ TYPICALR

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ VERYLOW INTRINSICCAPACITANCES

■ GATECHARGEMINIMIZED

DS(on)

DSS

500 V
500 V

=1.35 Ω

R

DS(on)

<1.5Ω
<1.5Ω

I

D

5.8 A

3.4 A

DESCRIPTION

Using the latest high voltageMESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switchingcharacteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCHMODEPOWER SUPPLIES(SMPS)

■ DC-ACCONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Para meter Value Uni t

ST P6 NB50 ST P6NB 50FP

V

V

V

I

DM

P

dv/dt(

V

T

(•) Pulsewidth limitedby safe operating area (1)ISD≤ 6A, di/dt ≤ 200 A/µs, VDD≤ V

March 1998

Drain-source Voltage (VGS=0) 500 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gat e- source Volt age ± 30 V

GS

Drain Current (con tinuous) at Tc=25oC5.83.4A

I

D

I

Drain Current (con tinuous) at Tc=100oC3.72.1A

D

500 V

(•) Drain Current (puls ed ) 23.2 23.2 A

Tot al Dissipat i on at Tc=25oC10035W

tot

Derat in g Factor 0.8 0.28 W/

1) Pea k Diode Recovery volt age sl ope 4.5 4.5 V/ns

Ins ulation With st and V oltage (DC) -- 2000

ISO

Sto rage Temper ature -65 to 150

stg

Max. Operat ing J unctio n Temper at u r e 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

o

C

1/9

STP6NB50/FP

THERMAL DATA

TO-220 TO- 220FP

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Value Uni t

I

AR

E

Ther mal Resist ance Junctio n-c a s e Max 1.25 3.57
Ther mal Resist ance Junctio n-ambient Max

Ther mal Resist ance Case-sink T yp
Maximum Lead T e mperat ure For Sold eri ng Pur p os e

l

Avalanche Curre nt , Repet it i v e or Not-Repetitive
(pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

5.8 A

290 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

500 V

Breakdown Voltage

I

DSS

I

GSS

Zer o Gate Vo lt age
Drain Cur rent (V

GS

Gat e-body Leakage
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125oC

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

345V

Voltage

R

DS(on)

Stati c Drain-so urce On

VGS=10V ID= 2.9 A 1.35 1.5 Ω

Resistance

I

D(on)

On S tate Drain Cu rr e nt VDS>I

D(on)xRDS(on)max

5.8 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

C

C

Input Capaci tance

iss

Out put C apa citanc e

oss

Reverse Transfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=2.9A 2.5 4 S

VDS=25V f=1MHz VGS= 0 680

110

12

884
149

16

µA
µA

pF
pF
pF

2/9

STP6NB50/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

Turn-on Time

r

Rise Time

t

VDD=250V ID=2.9A

=4.7 Ω VGS=10V

R

G

11.5
8

(see test circuit, figure 3)

Q

Q

Q

Total Gate Charge

g

Gat e-Sour ce Charge

gs

Gate-Drain Charge

gd

VDD=400V ID=5.8A VGS=10V 21

7.2
8

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

t

Of f - voltag e Rise Tim e
Fall Time

f

Cross-ov er Tim e

c

VDD=400V ID=5.8A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

7
5

15

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) For ward On Voltage ISD=5.8A VGS=0 1.6 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

= 5.8 A di/dt = 100 A /µs

I

SD

=100V Tj=150oC

V

DD

(see test circuit, figure 5)

435

3.3

Charge
Reverse Recovery

15

Current

16
12

30 nC

12
10
23

5.8

23.2

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP

3/9

STP6NB50/FP

ThermalImpedance for TO-220

OutputCharacteristics

ThermalImpedance forTO-220FP

TransferCharacteristics

Transconductance

4/9

StaticDrain-sourceOn Resistance

STP6NB50/FP

GateCharge vs Gate-sourceVoltage

Normalized GateThresholdVoltage vs
Temperature

CapacitanceVariations

Normalized On Resistancevs Temperature

Source-drainDiode Forward Characteristics

5/9

STP6NB50/FP

Fig. 1: Unclamped InductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 2: Unclamped Inductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5: Test Circuit For InductiveLoad Switching

And Diode RecoveryTimes

6/9

TO-220 MECHANICAL DATA

STP6NB50/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

7/9

STP6NB50/FP

TO-220FP MECHANICALDATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP6NB50/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for anyinfringementof patents or other rightsof third parties which may results from itsuse. No
license is granted by implication or otherwise underanypatent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsarenot authorizedfor use as critical componentsin life support devices orsystems withoutexpress
written approval ofSGS-THOMSON Microelectonics.

 1998 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved

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