Datasheet STP6NB25, STP6NB25FP Datasheet (SGS Thomson Microelectronics)

STP6NB25

STP6NB25FP

N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP

PowerMesh MOSFET

TYPE V

STP6NB25 250 V < 1.1 Ω 6A
STP6NB25FP 250 V < 1.1 Ω 3.7 A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS

DSS

(on) = 0.9 Ω

R

DS(on)

I

D

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad­vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with theCompany’sproprieraty edge termi­nation structure, gives the lowest R

DS(on)

per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris­tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ DC-DC & DC-AC CONVERTERS FOR

TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT

3

2

1

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP6NB25 STP6NB25FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns

V

ISO

T

stg

T

(•)Pulse width limitedby safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C

(●)

Drain Current (pulsed) 24 24 A
TotalDissipation at TC=25°C
Derating Factor 0.6 0.24 W/°C

Insulation Withstand Voltage (DC) - 2000
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD≤6A, di/dt ≤100A/µs, VDD≤ V

3.8 2.3 A

250 V
250 V

6 3.7 A

75 30 W

(BR)DSS,Tj≤TJMAX.

1/9Jun 2000

STP6NB25/FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.66 4.17 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250 µA, VGS=0

D

= Max Rating

V

DS

=0)

DS

GS

=0)

V

= Max Rating, TC= 125 °C

DS

= ±30V

V

GS

600 V

6A

200 mJ

1 µA

50 µA

±100 nA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On State Drain Current

V

DS=VGS,ID

= 10V, ID=3 A

V

GS

V

DS>ID(on)xRDS(on)max,

= 250µA

VGS=10V

234V

0.9 1.1 Ω

6A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

(1)

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 68 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID=3A

V

= 25V, f = 1 MHz, VGS=0

DS

3S

260 pF

9pF

2/9

STP6NB25/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

TotalGate Charge

g

Gate-Source Charge 7.5 nC
Gate-Drain Charge 3 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 7 ns
Cross-over Time 15 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 6 A

(2)

Source-drain Current (pulsed) 24 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 720 µC
Reverse Recovery Current 9 A

V

= 125 V,ID=3A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)

V

= 200V, ID=6A,

DD

= 10V

V

GS

V

= 200V, ID=6A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD= 6 A, VGS=0
I

= 6 A, di/dt = 100A/µs,

SD

= 100V, Tj= 150°C

V

DD

(see test circuit, Figure 5)

9ns
9ns

12 17 nC

8ns

1.6 V

160 ns

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

3/9

STP6NB25/FP

Thermal Impedence for TO-220

Output Characteristics

Thermal Impedence for TO-220FP

Transfer Characteristics

Transconductance

4/9

Static Drain-source On Resistance

STP6NB25/FP

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP6NB25/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP6NB25/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

7/9

STP6NB25/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

A

mm inch

E

D

8/9

B

L3

L6

L7

¯

H

L2

F1

F

G1

G

F2

123

L4

STP6NB25/FP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change withoutnotice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are notauthorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.

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