Page 1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STP 6NA60F P 600 V < 1.2 Ω 3.9 A
R
DS(on)
I
D
STP6NA60FP
PRELIMINARY DATA
■ TYPICALR
■ ±30VGATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOWINTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
=1Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized c ell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and ga te charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR Drain- g at e Volt age (R
V
I
DM
P
V
T
(•) Pulse width limitedby safe operating area
October 1997
Drain-s ou r ce V olt ag e (VGS=0) 600 V
DS
=20kΩ)
GS
Gate-source Voltage ± 30 V
GS
I
Drain Current (c ontinuous) at Tc=25oC3.9A
D
I
Drain Current (c ontinuous) at Tc=100oC2.6A
D
600 V
(•) Drain Current (pulsed) 26 A
Tot al Dissipa t ion at Tc=25oC40W
tot
Derating Factor 0.32 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 150
stg
T
Max. Ope r ating Junc t io n Tem pe r ature 150
j
o
C
o
C
o
C
1/5
Page 2
STP6NA60FP
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max V a lue Uni t
I
AR
E
Ther mal Resistanc e J unction- ca s e Max
Ther mal Resistanc e J unction- ambient Max
Ther mal Resistanc e Cas e - sink Ty p
Maximum Lea d Te mperat u re Fo r S oldering Purpos e
l
Avalanche Current , R epetiti ve or Not-Repetit ive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
3.12
62.5
0.5
300
6.5 A
215 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Breakdown Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
=0)
Gat e-body Leakage
Current (V
DS
=0)
=MaxRating
V
DS
V
=MaxRating Tc=100oC
DS
= ± 30 V
V
GS
25
250
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
2.25 3 3.7 5 V
Voltage
R
DS(on)
St at i c Drain - so ur ce On
VGS=10V ID=2.5A 1 1.2 Ω
Resistance
I
D(on)
On St at e Dra in Curr e nt VDS>I
D(on)xRDS(on)max
6.5 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put C apa c itance
oss
ReverseTr ansfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=3A 3.5 5.6 S
VDS=25V f=1MHz VGS= 0 1150
155
40
1550
210
55
µA
µA
pF
pF
pF
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Page 3
STP6NA60FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Tim e
Rise T ime
t
r
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
V
R
= 300 V ID=3A
DD
=47 Ω VGS=10V
G
VDD=480V ID=3A VGS=10V 54
35
90
8
23
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltage Ris e Tim e
Fall Time
f
Cross-ov er T ime
c
VDD=480V ID=6A
=47 Ω VGS=10V
R
G
(see test circuit, figure 5)
80
20
115
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On Voltage ISD=6.5A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 6 A di/dt = 1 00 A /µs
I
SD
=100V Tj=150oC
V
DD
(see circuit, f igure 5)
600
9
Charge
Reverse Recovery
30
Current
55
125
75 nC
110
30
155
6.5
26
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
Page 4
STP6NA60FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
4/5
Page 5
STP6NA60FP
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of thirdparties whichmay results from its use. No
license is granted by implicationor otherwiseunder anypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject tochange without notice.This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedforuseas critical components inlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy- All Rights Reserved
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