Datasheet STP6NA60FI, STP6NA60 Datasheet (SGS Thomson Microelectronics)

STP6NA60

STP6NA60FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

STP 6NA60
STP 6NA60FI

■ TYPICAL R

■ ±30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

DS(on)

DSS

600 V
600 V

=1Ω

R

DS(on)

<1.2Ω
<1.2Ω

I

D

6.5 A

3.9 A

o

C

DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R

and gate charge, unequalled

DS(on)

ruggedness and superior switching performance.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

ST P6NA60 ST P6NA60FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 600 V

DS

Drain - gat e Voltage (RGS=20kΩ)600V

DGR

Gate-source Voltage ± 30 V

GS

Drain Current (continuous) at Tc=25oC6.53.9A

I

D

Drain Current (continuous) at Tc=100oC4.3 2.6A

I

D

(•) Drain Current (pulsed) 26 26 A

Total Di ssipation at Tc=25oC 125 45 W

tot

Derating Factor 1 0.36 W/
Ins ulation Withs t and Voltag e (DC)  2000 V

ISO

St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun c t ion Temperat ure 150

T

j

o
o

o

C

C
C

1/10

STP6NA60/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Res istance Junction-c ase Max 1 2.78
Thermal Resis tance Junction-ambie nt Max

Thermal Res istance Case -s ink Typ
Maximum Lead Temperature For Soldering Purp ose

l

Avalanc h e Cu rr ent , Repet itive or Not-Repetitiv e
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Repetitiv e

(Tc= 100oC, pulse width l imited b y Tjmax, δ <1%)

62.5

0.5

300

6.5 A

215 mJ

9.5 mJ

4.3 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 600 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e Voltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

= ± 30 V ± 100 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n

VGS=10V ID=3A 1 1.2 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

6.5 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=3A 3.5 5.6 S

VDS=25V f=1MHz VGS= 0 1150

155

40

1550

210

55

µA
µA

pF
pF
pF

2/10

STP6NA60/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on Current Slope VDD=480V ID=6A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=300V ID=3A
RG=47 Ω VGS=10V

35
90

(see test circuit, figure 3)

200 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)

VDD= 480 V ID=3A VGS=10V 54

8

23

VDD=480V ID=6A
RG=47 Ω VGS=10V
(see test circuit, figure 5)

80
20

115

50

125

75 nC

110

30

155

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

6.5
26

(pulsed)

V

(∗) For w ar d On Voltage ISD=6.5A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

600

9

Charge

I

RRM

Reverse Recovery

30

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas for TO-220 Safe Operating Areas forISOWATT220

A
A

ns

µC

A

3/10

STP6NA60/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP6NA60/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP6NA60/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP6NA60/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP6NA60/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP6NA60/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP6NA60/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement ofpatents or other rights of third parties which mayresults from its use.No
licenseis granted by implication or otherwise under any patentor patentrights of SGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication aresubject tochange withoutnotice. This publicationsupersedes and replaces allinformation previously supplied.
SGS-THOMSON Microelectronics products are notauthorizedfor use ascriticalcomponents in lifesupportdevices orsystemswithout express
writtenapproval of SGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics - Printed in Italy- All Rights Reserved

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