Datasheet STP6N60FI Datasheet (SGS Thomson Microelectronics)

STP6N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STP 6N60FI 600 V < 1. 2 Ω 3.8 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ APPLICATION ORIENTED

DS(on)

=1Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT

3

2

1

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

May 1993

Drain - s ource Voltage (VGS= 0) 600 V

DS

Drain- gate Voltage (RGS=20kΩ) 600 V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC3.8A

I

D

I

Drain Current (continuous) at Tc=100oC2.4A

D

(•) Drain Current (pulsed) 24 A

Total D i ssipation at Tc=25oC40W

tot

Derat ing Factor 0.32 W/
Ins ulation Withs t and Voltage (DC) 2000 V

ISO

St or a ge Tem perature -65 to 150

stg

T

Max. Operating Junctio n Temperatur e 150

j

o

C

o

C

o

C

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STP6N60FI

THERMAL DATA

R

thj-case

R

thj-amb

R

thj-amb

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Uni t

I

AR

E

E

I

AR

Thermal Res istance Junction -c as e Max
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

3.12

62.5

0.5

300

6A

370 mJ

17 mJ

3.7 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 600 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Voltage
Drain Current (V

GS

Gat e- body Leakage

=0)

=MaxRating

V

DS

V

= Max R ating x 0.8 Tc=125oC

DS

250

1000µAµA

VGS= ± 20 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

Resistance
On St ate Dra in Current VDS>I

VGS=10V ID=3A
VGS=10V ID=3A Tc=100oC

D(on)xRDS(on)max

11.2

2.4

6A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=3A 2 4.8 S

VDS=25V f=1MHz VGS= 0 1150

160

75

1500

240
110

Ω
Ω

pF
pF
pF

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STP6N60FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=480V ID=6A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=300V ID=3A
RG=50 Ω VGS=10V

50

14065175

(see test circuit, figure 3)

240 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 480 V ID=6A VGS=10V 78

8

41

VDD=480V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

100

27

145

98 nC

125

34

180

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

3.8
24

(pulsed)

V

(∗) For w ar d On Volt age ISD=6A VGS=0 2 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

750

13.5

Charge

I

RRM

Reverse Recovery

38

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/9

STP6N60FI

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/9

Gate Charge vs Gate-source Voltage

STP6N60FI

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

5/9

STP6N60FI

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/9

STP6N60FI

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/9

STP6N60FI

ISOWATT220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 3.66

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

H

L2

F2

F

123

L4

G1

G

P011G

8/9

STP6N60FI

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunderany patentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedforuse ascriticalcomponentsin lifesupportdevices orsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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