Datasheet STP6N25FI, STP6N25 Datasheet (SGS Thomson Microelectronics)

STP6N25

STP6N25FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

PRELIMINARY DATA

TYPE V

STP 6N25
STP 6N25FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ APPLICATION ORIENTED

DS(on)

DSS

250 V
250 V

= 0.7 Ω

R

DS(on)

<1 Ω

<1 Ω

I

D

6A
4A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH SPEED SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ INDUSTRIALACTUATORS

■ DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT

■ PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP
BALLASTS

3

2

1

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP6N25 STP6N25FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

June 1993

Drain - s ource Voltage (VGS=0) 250 V

DS

Drain- gate Voltage (RGS=20kΩ)250V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC64A

I

D

Drain Current (continuous) at Tc=100oC42.6A

I

D

(•) Drain Current (pulsed) 24 24 A

Total Di ssipation at Tc=25oC7035W

tot

Derat ing Factor 0.56 0.28 W/
Ins ulation Withs t and Voltage (DC)  2000

ISO

St or a ge Tem perature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o
o

o

C

C
C

1/10

STP6N25/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.79 3.57
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Sol dering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limit ed by Tjmax, δ <1%)

62.5

0.5

300

6A

40 mJ

10 mJ

4A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 250 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

= ± 20 V ± 10 0 nA

V

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

Resistance
On State Drain Current VDS>I

VGS=10V ID=3A
VGS=10V ID=3A Tc=100oC

D(on)xRDS(on)max

0.7 1
2

6A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=3A 1.5 3.5 S

VDS=25V f=1MHz VGS=0 500

85
15

700
120

30

Ω
Ω

pF
pF
pF

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STP6N25/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=200V ID=6A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=125V ID=3A
RG=50 Ω VGS=10V

35
70

(see test circuit, figure 3)

220 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 200 V ID=6A VGS=10V 20

6
7

VDD=200V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

40
25
70

50

100

30 nC

60
35

100

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

6

24

(pulsed)

V

(∗) Forwar d On V oltage ISD=6A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

180

1.1

Charge

I

RRM

Reverse Recovery

12

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP6N25/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

STP6N25/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP6N25/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP6N25/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP6N25/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP6N25/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

H

L2

F2

F

123

L4

G1

G

P011G

9/10

STP6N25/FI

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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