Datasheet STP6LNC60FP, STP6LNC60 Datasheet (SGS Thomson Microelectronics)

STP6LNC60

STP6LNC60FP

N-CHANNEL 600V - 1Ω - 5.8A TO-220/TO-220FP

PowerMesh™II MOSFET

TYPE V

STP6LNC60
STP6LNC60FP

■ TYPICAL R

■ EXTREMELY HIGH dv /d t CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

DS

DSS

600 V
600 V

(on) = 1.0 Ω

R

DS(on)

< 1.25 Ω
< 1.25 Ω

I

D

5.8 A

5.8 A

DESCRIPTION

The PowerMESH
generation of MESH OVERLAY

™II is the evolution of the first

™. The layout re-

finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea d­ing edge for what concerns switching speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLI ES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP6LNC60 STP6LNC60FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limite d by safe operat i ng area
(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

600 V
600 V

Gate- source Voltage ±30 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 23.2 23.2 (*) A
Total Dissipation at TC = 25°C

5.8 5.8 (*) A

3.65 3.65 (*) A

100 35 W

Derating Factor 0.8 0.28 W/°C

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature
Max. Operating Junction Temperature

(1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V

–65 to 150 °C

(BR)DSS

, Tj ≤ T

JMAX.

1/9October 2001

STP6LNC60/STP6LNC60FP

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.25 3.53 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 600 V

5.8 A

300 mJ

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 3 A

234V

1.0 1.25 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 120 pF
Reverse Transfer

Capacitance

ID=3A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

6S

830 pF

15.5 pF

2/9

STP6LNC60/STP6LNC60FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 15.5 ns
Total Gate Charge

Gate-Source Charge 4.8 nC
Gate-Drain Charge 17.5 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 7.5 ns
Cross-over Time 16 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.

2. Pulse width li mited by safe operating area .

Source-drain Current 5.8 A

(2)

Source-drain Current (pulsed) 23.2 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 2.4 µC
Reverse Recovery Current 10.6 A

= 300 V, ID = 3 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 480V, ID = 6 A,

DD

VGS = 10V

V

= 480V, ID = 6 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 6 A, VGS = 0
I

=6 A, di/dt = 100A/µs

SD

VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)

14.5 ns

28 39 nC

9ns

1.6 V

450 ns

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

3/9

STP6LNC60/STP6LNC60FP

Thermal Impedence for TO-220FPThermal Impedence for TO-220

Output Characteristics

Transconductance Static Drain-source On Resistance

Transfer Characteristics

4/9

STP6LNC60/STP6LNC60FP

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP6LNC60/STP6LNC60FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

E

TO-220 MECHANICAL DATA

STP6LNC60/STP6LNC60FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

P011C

7/9

STP6LNC60/STP6LNC60FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

8/9

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

STP6LNC60/STP6LNC60FP

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