Datasheet STP60NH2LL Datasheet (ST)

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N-channel 24V - 0.010Ω - 40A TO-220

General features

V

Type

STP60NH2LL 24V <0.011Ω 40A

1. Value limited by wire bonding

DSS

(@Tjmax)

R

DS(on)

I

STP60NH2LL

STripFET™ Power MOSFET

D

(1)

■ R

■ Conduction losses reduced

■ Switching losses reduced

■ Low threshold device

* Qg industry’s benchmark

DS(ON)

Description

The STP60NH2LL utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable for the most
demanding DC-DC converter application where
high efficiency is to be achieved.

Applications

■ Switching application

3

2

1

TO-220

Internal schematic diagram

Order codes

Part number Marking Package Packaging

STP60NH2LL P60NH2LL TO-220 Tube

January 2007 Rev 3 1/14

www.st.com

14

Contents STP60NH2LL

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STP60NH2LL Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

(1)

V

spike

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

E

AS

T

stg

T

1. Guaranteed when external Rg=4.7 Ω and tf < t

2. Pulse width limited by safe operating area

3. Starting Tj = 25 oC, ID = 20A, VDD = 15V

Drain-source Voltage Rating 30 V

Drain-source voltage (VGS = 0) 24 V

Gate-source voltage ±18 V

Drain current (continuous) at TC = 25°C 40 A

Drain current (continuous) at TC=100°C 28 A

(2)

Drain current (pulsed) 160 A

Total dissipation at TC = 25°C 60 W

Derating factor 0.4 W/°C

(3)

Single pulse avalanche energy 600 mJ

Storage temperature

-55 to 175 °C

Max. operating junction temperature

j

fmax

Table 2. Thermal data

R

thj-case

R

thj-a

T

Thermal resistance junction-case Max 2.5 °C/W

Thermal resistance junction-ambient Max 100 °C/W

Maximum lead temperature for soldering

l

purpose

275 °C

3/14

Electrical characteristics STP60NH2LL

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current
(VDS = 0)

= 25 mA, VGS= 0 24 V

I

D

V

= Max rating,

DS

= Max rating

V

DS

TC=125°C

V

= ±16V ± 100 nA

GS

1

10

Gate threshold voltage VDS= VGS, ID = 250µA 1 V

Static drain-source on
resistance

= 10V, ID= 20A

V

GS

= 4.5V, ID= 20A

V

GS

0.010

0.012

0.011

0.0135

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 10V, ID = 10A 18 S

DS

V

=25V, f=1 MHz,

DS

=0

V

GS

990
385

40

µA
µA

Ω

pF
pF
pF

Turn-on delay time

t

rise time

r

Turn-off delay time

t

fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

(2)

Output charge VDS= 16 V, VGS= 0 V 7.6 nC

VDD = 10 V, ID = 20 A
R
(see Figure 13)

0.44 ≤ V
V

Q

t

d(on)

t

d(off)

Q

Q

Q

oss

f=1MHz Gate DC Bias=0

R

Gate input resistance

g

test signal level=20mV
open drain

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A

4/14

=4.7 Ω, VGS = 4.5 V

G

=10V, ID = 40A

DD

=4.5V

GS

5
56
13
10

8.7

4.2

2.4

27 nC

ns
ns

ns
ns

nC
nC

1.3 Ω

STP60NH2LL Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 40 A

Source-drain current (pulsed) 160 A

(1)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

I

=20A, VGS=0

SD

=40A,

I

SD

di/dt = 100A/µs,

=15V, Tj=150°C

V

DD

(see Figure 15)

32.5
28

1.7

1.3 V

ns

µC

A

5/14

Electrical characteristics STP60NH2LL

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

6/14

STP60NH2LL Electrical characteristics

Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage

vs. temperature

Figure 11. Source-drain diode forward

characteristics

Figure 10. Normalized on resistance vs.

temperature

Figure 12. Normalized Breakdown Voltage vs.

Tem perature

7/14

Test circuit STP60NH2LL

3 Test circuit

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped Inductive load test

circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/14

STP60NH2LL Appendix A

4 Appendix A

Figure 19. Buck converter: power losses estimation

The power losses associated with the FETs in a synchronous buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.

● The low side (SW2) device requires:

● Very low R

● Small Qgls to reduce the gate charge losses

● Small Coss to reduce losses due to output capacitance

● Small Qrr to reduce losses on SW1 during its turn-on

● The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source

● voltage to avoid the cross conduction phenomenon;

● The high side (SW1) device requires:

● Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on

the gate

● Small Qg to have a faster commutation and to reduce gate charge losses

● Low R

DS(on)

to reduce conduction losses

DS(on)

to reduce the conduction losses.

9/14

Appendix A STP60NH2LL

V

Table 6. Power losses calculation

High side switching (SW1) Low side switch (SW2)

Pconduction

Pswitching Zero Voltage Switching

Pdiode

Pgate(Q

Conductio

P

Qoss

Recovery

(1)

n

)

G

Not applicable

Not applicable

2

δ

*I *R

LDS(on)SW1

I

+

gd(SW1)gsth(SW1)in

f*V*Q

ggg(SW1)

oss(SW1)in

f*Q*V

L

*f*)Q(Q*

I

g

2

1. Dissipated by SW1 during turn-on

Table 7. Parameters meaning

2
LDS(on)SW2

rr(SW2)in

deadtimeLf(SW2)

gggls(SW2)

oss(SW2)in

)1(*I *R

δ

−

f*Q*V

f*t*I*V

f*V*Q

f*Q*V

2

Parameter Meaning

d Duty-cycle

Q

gsth

Q

gls

Pconduction On state losses

Pswitching On-off transition losses

Pdiode Conduction and reverse recovery diode losses

Pgate Gate drive losses

P

Qoss

10/14

Post threshold gate charge

Third quadrant gate charge

Output capacitance losses

STP60NH2LL Package mechanical data

5 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

11/14

Package mechanical data STP60NH2LL

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1 .15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027

D 15.25 15.75 0.60 0.620

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4 .95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551

L1 3 .50 3.93 0.137 0.154

L20 16.40 0.645

L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

12/14

STP60NH2LL Revision history

6 Revision history

Table 8. Revision history

Date Revision Changes

31-May-2005 1 First release.

06-Sep-2006 2 The document has been reformatted.

31-Jan-2007 3 Typo mistake on Tab le 1 .

13/14

STP60NH2LL

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