Datasheet STP60NH2LL Datasheet (ST)

Page 1
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N-channel 24V - 0.010Ω - 40A TO-220
General features
V
Type
STP60NH2LL 24V <0.011 40A
1. Value limited by wire bonding
DSS
(@Tjmax)
R
DS(on)
I
STP60NH2LL
STripFET™ Power MOSFET
D
(1)
R
Conduction losses reduced
Switching losses reduced
Low threshold device
* Qg industry’s benchmark
Description
The STP60NH2LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Applications
Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number Marking Package Packaging
STP60NH2LL P60NH2LL TO-220 Tube
January 2007 Rev 3 1/14
www.st.com
14
Page 2
Contents STP60NH2LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Page 3
STP60NH2LL Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
(1)
V
spike
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
E
AS
T
stg
T
1. Guaranteed when external Rg=4.7 and tf < t
2. Pulse width limited by safe operating area
3. Starting Tj = 25 oC, ID = 20A, VDD = 15V
Drain-source Voltage Rating 30 V
Drain-source voltage (VGS = 0) 24 V
Gate-source voltage ±18 V
Drain current (continuous) at TC = 25°C 40 A
Drain current (continuous) at TC=100°C 28 A
(2)
Drain current (pulsed) 160 A
Total dissipation at TC = 25°C 60 W
Derating factor 0.4 W/°C
(3)
Single pulse avalanche energy 600 mJ
Storage temperature
-55 to 175 °C
Max. operating junction temperature
j
fmax
Table 2. Thermal data
R
thj-case
R
thj-a
T
Thermal resistance junction-case Max 2.5 °C/W
Thermal resistance junction-ambient Max 100 °C/W
Maximum lead temperature for soldering
l
purpose
275 °C
3/14
Page 4
Electrical characteristics STP60NH2LL
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate body leakage current (VDS = 0)
= 25 mA, VGS= 0 24 V
I
D
V
= Max rating,
DS
= Max rating
V
DS
TC=125°C
V
= ±16V ± 100 nA
GS
1
10
Gate threshold voltage VDS= VGS, ID = 250µA 1 V
Static drain-source on resistance
= 10V, ID= 20A
V
GS
= 4.5V, ID= 20A
V
GS
0.010
0.012
0.011
0.0135
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 10V, ID = 10A 18 S
DS
V
=25V, f=1 MHz,
DS
=0
V
GS
990 385
40
µA µA
pF pF pF
Turn-on delay time
t
rise time
r
Turn-off delay time
t
fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
(2)
Output charge VDS= 16 V, VGS= 0 V 7.6 nC
VDD = 10 V, ID = 20 A R (see Figure 13)
0.44 ≤ V V
Q
t
d(on)
t
d(off)
Q
Q
Q
oss
f=1MHz Gate DC Bias=0
R
Gate input resistance
g
test signal level=20mV open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A
4/14
=4.7 Ω, VGS = 4.5 V
G
=10V, ID = 40A
DD
=4.5V
GS
5 56 13 10
8.7
4.2
2.4
27 nC
ns ns
ns ns
nC nC
1.3
Page 5
STP60NH2LL Electrical characteristics
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 40 A
Source-drain current (pulsed) 160 A
(1)
Forward on voltage
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
I
=20A, VGS=0
SD
=40A,
I
SD
di/dt = 100A/µs,
=15V, Tj=150°C
V
DD
(see Figure 15)
32.5 28
1.7
1.3 V
ns
µC
A
5/14
Page 6
Electrical characteristics STP60NH2LL
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
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STP60NH2LL Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs. temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs.
temperature
Figure 12. Normalized Breakdown Voltage vs.
Tem perature
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Page 8
Test circuit STP60NH2LL
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
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Page 9
STP60NH2LL Appendix A
4 Appendix A
Figure 19. Buck converter: power losses estimation
The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature.
The low side (SW2) device requires:
Very low R
Small Qgls to reduce the gate charge losses
Small Coss to reduce losses due to output capacitance
Small Qrr to reduce losses on SW1 during its turn-on
The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
voltage to avoid the cross conduction phenomenon;
The high side (SW1) device requires:
Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on
the gate
Small Qg to have a faster commutation and to reduce gate charge losses
Low R
DS(on)
to reduce conduction losses
DS(on)
to reduce the conduction losses.
9/14
Page 10
Appendix A STP60NH2LL
V
Table 6. Power losses calculation
High side switching (SW1) Low side switch (SW2)
Pconduction
Pswitching Zero Voltage Switching
Pdiode
Pgate(Q
Conductio
P
Qoss
Recovery
(1)
n
)
G
Not applicable
Not applicable
2
δ
*I *R
LDS(on)SW1
I
+
gd(SW1)gsth(SW1)in
f*V*Q
ggg(SW1)
oss(SW1)in
f*Q*V
L
*f*)Q(Q*
I
g
2
1. Dissipated by SW1 during turn-on
Table 7. Parameters meaning
2 LDS(on)SW2
rr(SW2)in
deadtimeLf(SW2)
gggls(SW2)
oss(SW2)in
)1(*I *R
δ
f*Q*V
f*t*I*V
f*V*Q
f*Q*V
2
Parameter Meaning
d Duty-cycle
Q
gsth
Q
gls
Pconduction On state losses
Pswitching On-off transition losses
Pdiode Conduction and reverse recovery diode losses
Pgate Gate drive losses
P
Qoss
10/14
Post threshold gate charge
Third quadrant gate charge
Output capacitance losses
Page 11
STP60NH2LL Package mechanical data
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data STP60NH2LL
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1 .15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4 .95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3 .50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
12/14
Page 13
STP60NH2LL Revision history
6 Revision history
Table 8. Revision history
Date Revision Changes
31-May-2005 1 First release.
06-Sep-2006 2 The document has been reformatted.
31-Jan-2007 3 Typo mistake on Tab le 1 .
13/14
Page 14
STP60NH2LL
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