Datasheet STP60NF03L Datasheet (SGS Thomson Microelectronics)



STP60NF03L

N-CHANNEL 30V - 0.008

TYPE V

ST P60NF03L 30 V < 0. 010 Ω 60 A

■ TYPICALR

■ LOW THRESHOLDDRIVE

DS(on)

DSS

= 0.008 Ω

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc. )

R

DS(on)

I

D

Ω

- 60A TO-220

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

E

AS(1

T

(•) Pulse width limited by safe operating area (1) starting Tj

September 1999

Dra in- sour c e Volt age ( VGS=0) 30 V

DS

Dra in- gate V ol t age (RGS=20kΩ)30V

DGR

Gat e-source Voltage

GS

I

Dra in Current ( continuous) at Tc=25oC60A

D

I

Dra in Current ( continuous) at Tc=100oC42A

D

(•) D rain Current (pulsed) 240 A

Tot al Dissipat ion at Tc=25oC 100 W

tot

Der ati ng Fac t or 0.67 W/

) Single Pulse Avalanche Energy 650 mJ

St orage Temper at ure -65 t o 175

stg

T

Max. O perating Junc t ion T emperatur e 175

j

=25oC,ID=30A,VDD= 20V

20 V

±

o

C

o

C

o

C

1/6

STP60NF03L

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-sink

T

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperature For Soldering Purpos e

l

1.5

62.5

0.5

300

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n V o lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curr e nt (V

GS

Gat e- bod y Leak ag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.52.5V
Sta t ic Drain-s ource On

Resistance

VGS=10V ID=30A

=4.5V ID=30A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.008

0.0095

60 A

0.010

0.015ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capacitance

iss

Out put Capac it ance

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=30 A 60 S

VDS=25V f=1MHz VGS= 0 2550

630
215

µ
µA

pF
pF
pF

A

2/6

STP60NF03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time
Rise Tim e

r

VDD=15V ID=30A
R

=4.7

G

Ω

VGS=4.5V

40

250

(Resis t iv e Load, see f ig. 3)

Q
Q
Q

Tot al Gat e Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=60A VGS=5V 43

12
21

58 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Time

t

Fall T ime

f

VDD=15V ID=30A

=4.7 Ω VGS=4.5V

R

G

60
70

(Resis t iv e Load, see f ig. 3)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SDM

V

I

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

60

240

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 60 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

75

100
Charge
Reverse Recovery

2.6

Current

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

3/6

STP60NF03L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/6

TO-220 MECHANICAL DATA

STP60NF03L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

5/6

STP60NF03L

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subjectto change without notice.Thispublicationsupersedes and replacesall informationpreviouslysupplied. STMicroelectronicsproducts
are not authorized for use as critical components in life support devicesor systemswithout express written approvalof STMicroelectronics.

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