Datasheet STP60NE10FP, STP60NE10 Datasheet (SGS Thomson Microelectronics)

STP60NE10



STP60NE10FP

N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP

STripFET POWER MOSFET

TYPE V

ST P60NE10
ST P60NE10FP

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

DSS

100 V
100 V

= 0.016 Ω

CHARACTERIZATION

DESCRIPTION

This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process.The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re­markablemanufacturingreproducibility.

APPLICATIONS

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DCCONVERTERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

R

DS(on)

<0.022Ω
<0.022Ω

I

D

60 A
30 A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P60NE10 ST P60NE10FP

V

V

V

I

DM

P

V

dv/ dt Peak Diode Recovery v olt a ge slope 7 V/ns

T

(•) Pulsewidth limited by safeoperating area (1)ISD≤ 60 A, di/dt ≤ 300 A/µs, VDD≤ V

May 1999

Drain-source Voltage (VGS= 0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ) 100 V

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Curre nt (cont inuous) at Tc=25oC6030A

D

Drain Curre nt (cont inuous) at Tc=100oC4221A

I

D

(•) Dr ain Curre nt (pulse d) 240 120 A

Total Dissipation at Tc=25oC 160 50 W

tot

Derat ing F ac tor 1.06 0.37 W/
Ins ulat ion W ithstand Voltage (DC)  20 00 V

ISO

Sto rage Temperat ure -65 t o 175

stg

T

Max. Oper ating Junction Tempe rat ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STP60NE10/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 0.94 2.7
Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature F or Solder ing Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=35V)

j

max)

j

62.5

0.5

300

60 A

100 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 100 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250µA 234V
Sta t ic Drain-s ource O n

VGS=10V ID= 30 A 0.016 0.022

Resistance

I

D(on)

On StateDrain Current VDS>I

D(on)xRDS(on )max

60 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac it ance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=18 A 30 S

VDS=25V f=1MHz VGS= 0 5300

640
215

µA
µA

Ω

pF
pF
pF

2/9

STP60NE10/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time
Rise Time

r

VDD=50V ID=30A
R

=4.7

G

Ω

VGS=10V

28

100

(Resis t iv e Load, s ee f ig. 3 )

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=80V ID=60A VGS= 10 V 142

27
59

185 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y T ime

t

Fall T ime

f

VDD=50V ID=30A

=4.7 Ω VGS=10V

R

G

160

45

(Resis t iv e Load, s ee f ig. 3 )

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

V

=80V ID=60A

clamp

=4.7 Ω VGS=10V

R

G

(Indu ctive Load , see fig . 5)

40
45
85

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Sou rc e-d rai n Cu rre nt

(•)

Sou rc e-d rai n Cu rre nt

60

240

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 60 A di /dt = 100 A/µs

=50V Tj=150oC

V

DD

(s ee t est c ircu it , f ig. 5)

170

1.02
Charge
Reverse Recovery

12

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µC

A

Safe Operating Areafor TO-220 Safe Operating Areafor TO-220FP

3/9

STP60NE10/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP60NE10/FP

Gate Charge vs Gate-sourceVoltage

NormalizedGate ThresholdVoltage vs
Temperature

CapacitanceVariations

NormalizedOn Resistancevs Temperature

Source-drainDiode Forward Characteristics

5/9

STP60NE10/FP

Fig. 1: UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad

Fig. 2:UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5: TestCircuit ForInductiveLoad Switching
And Diode Recovery Times

6/9

TO-220 MECHANICALDATA

STP60NE10/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP60NE10/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP60NE10/FP

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of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previously supplied. STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

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