Datasheet STP60NE06L-16FP, STP60NE06L-16 Datasheet (SGS Thomson Microelectronics)

STP60NE06L-16



N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP

TYPE V

ST P60NE06L-16
ST P60NE06L-16F P

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ LOW GATE CHARGE

■ HIGHCURRENT CAPABILITY

■ 175

■ LOW THRESHOLDDRIVE

o

DS(on)

C OPERATINGTEMPERATURE

DSS

60 V
60 V

= 0.014 Ω

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronisunique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristicsand
less critical alignment steps therefore a remarka­ble manufacturingreproducibility.

R

DS(on)

<0.016Ω
<0.016Ω

I

D

60 A
35 A

STP60NE06L-16FP

STripFET POWER MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ DC-DC& DC-ACCONVERTERS

■ AUTOMOTIVEENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP 60NE06L- 16 STP 60NE 0 6L - 16 F P

V

V

V

I

DM

P

V

dv/ dt Peak Diode Recovery voltage slope 6 V/ ns

T

(•) Pulsewidth limited by safeoperating area (1)ISD≤ 60 A, di/dt ≤ 300 A/µs, VDD≤ V

May 2000

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 15 V

GS

I

Drain Curre nt (cont i nuous) at Tc=25oC60 35A

D

Drain Curre nt (cont i nuous) at Tc=100oC42 24A

I

D

(•) Drain Curre nt (pulse d) 240 140 A

Total Dissipation at Tc=25oC15045W

tot

Derat ing F ac tor 1 0.3 W/
Ins ulat ion W i th s t and Voltage (DC)  2 000 V

ISO

Sto rage Temperat ure -65 to 175

stg

T

Max. Operat ing Junction Tempera t ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STP60NE06L-16/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 0.94 2.7
Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature F or Solder ing P urp os e

l

Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

62.5

0.5

300

60 A

400 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 60 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc= 125oC

V

DS

V

=± 15 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Volt age VDS=VGSID= 250µA11.62.5V
Sta t ic Drain-s our c e On

Resistance

VGS=5V ID=30A

=10V ID=30A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.014

0.012

60 A

0.016

0.014ΩΩ

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=30 A 30 S

VDS=25V f=1MHz VGS= 0 4150

590
150

µA
µA

pF
pF
pF

2/9

STP60NE06L-16/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time
Rise Time

r

VDD=30V ID=30A
R

=4.7

G

Ω

VGS=5V

50

155

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=40V ID=60A VGS=5V 55

15
30

70 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=30V ID=30A
R

G

=4.7

Ω

VGS=5V

125

25

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=48V ID=20A
R

=4.7

G

Ω

VGS=5V

(Indu ct iv e Load, see fig . 5)

45
220
280

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

60

240

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 60 A di/dt = 100 A/µs

=30V TJ=150oC

V

DD

(see test circuit, fig. 5)

85
300

Charge
Reverse Recovery

7

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP60NE06L-16/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP60NE06L-16/FP

Gate Charge vs Gate-sourceVoltage

NormalizedGate ThresholdVoltage vs
Temperature

CapacitanceVariations

NormalizedOn Resistancevs Temperature

Source-drainDiode Forward Characteristics

5/9

STP60NE06L-16/FP

Fig. 1

: UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad

Fig. 2

: UnclampedInductive Waveform

Fig. 4: GateCharge testCircuit

Fig. 5

: TestCircuitFor InductiveLoad Switching

And Diode Recovery Times

6/9

TO-220 MECHANICALDATA

STP60NE06L-16/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP60NE06L-16/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP60NE06L-16/FP

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