Page 1
STP60NE03L-12
N - CHANNEL 30V - 0.009 Ω - 60A - T0-220
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST P60NE03L-12 30 V < 0.012 Ω 60 A
■ TYPICALR
■ AVALANCERUGGED TECHNOLOGY
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ 175
■ APPLICATIONORIENTED
o
C OPERATINGTEMPERATURE
DS(on)
= 0.009 Ω
o
C
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ DC-DC& DC-ACCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Recovery v olt age sl ope 5.5 V/ns
T
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 60 A, di/dt ≤ 450 A/µs, VDD≤ V
February 1999
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gat e Voltage (RGS=20kΩ)30V
DGR
Gat e-source Volt age ± 20 V
GS
I
Dra in Cu rr ent ( c ont inuous) at Tc=25oC60A
D
I
Dra in Cu rr ent ( c ont inuous) at Tc=100oC42A
D
(•) D rain Cu rr ent ( p uls ed ) 240 A
Tot al Dissipation at Tc=25oC 100 W
tot
Der ati ng Fact or 0.67 W/
St orage Tem pe r at ure -65 to 175
stg
T
Max. Operating J unction Temperature 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
Page 2
STP60NE03L-12
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature For So ldering Purpos e
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max)
j
1.5
62.5
0.5
300
60 A
250 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Volt age VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=30A
=5V ID=30A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.009 0.012
0.018
60 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=30 A 20 30 S
VDS=25V f=1MHz VGS= 0 2200
570
200
µ
µA
Ω
pF
pF
pF
A
2/8
Page 3
STP60NE03L-12
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay Time
Rise Time
r
VDD=15V ID=30A
R
=4.7
G
Ω
VGS=5V
40
260
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=24V ID=60A VGS=5V 35
18
13
45 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Dela y Tim e
t
Fall T ime
f
VDD=15V ID=30A
=4.7 Ω VGS=5V
R
G
75
50
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=24V ID=60A
=4.7 Ω VGS=15V
R
G
(Indu ct iv e Load, see fig . 5)
35
120
175
SOURCEDRAIN DIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SDM
V
I
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
60
240
(pulsed)
(∗)ForwardOnVoltage ISD=60A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 60 A di/dt = 100 A /µs
=15V Tj=150oC
V
DD
(see test circuit, fig. 5)
55
0.1
Charge
Reverse Recovery
3.5
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µC
A
(∗) Pulsed: Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
SafeOperating Area ThermalImpedance
3/8
Page 4
STP60NE03L-12
OutputCharacteristics
Transconductance
TransferCharacteristics
Static Drain-sourceOn Resistance
Gate Charge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STP60NE03L-12
NormalizedGate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
NormalizedOn Resistancevs Temperature
5/8
Page 6
STP60NE03L-12
Fig. 1:
UnclampedInductiveLoad TestCircuit
Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad
Fig. 2:
UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
Page 7
TO-220 MECHANICALDATA
STP60NE03L-12
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/8
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STP60NE03L-12
Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.
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