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STP60NE03L-10
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
■ TYPICALR
DS(on)
=0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
o
C
■ APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc. )
INTERNAL SCHEMATIC DIAGRAM
December 1997
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
DS
Drain-source Voltage (VGS=0) 30 V
V
DGR
Drain- gate Voltage ( RGS=20kΩ)
30 V
V
GS
Gat e- source Volt age ± 15 V
I
D
Drain Current (c on t in uous) at Tc=25oC60A
I
D
Drain Current (c on t in uous) at Tc=100oC42A
I
DM
(•) Drain Current (pulsed) 240 A
P
tot
Tot al Dissip at i on at Tc=25oC120W
Derating Factor 0.8 W/
o
C
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
stg
Sto rage T emperat ure -65 to 175
o
C
T
j
Max. Oper at in g Junc t io n Temperatur e 175
o
C
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 60 A,di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
STP60NE03L-10 30 V < 0.010 Ω 60 A
1
2
3
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THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
l
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Tempera t ure For Sold ering Purpose
1.25
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Uni t
I
AR
Avalanche Current, Repetit i v e or Not-Repetitive
(pulse w idth limited by T
j
max, δ <1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=20V)
600 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=250µAVGS=0
30 V
I
DSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125
o
C
1
10
µA
µA
I
GSS
Gat e-body Leakage
Current (V
DS
=0)
V
GS
= ± 15 V
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
Voltage
V
DS=VGSID
=250µA
11.72.5V
R
DS(on)
Stati c Drain-so urce On
Resistance
VGS=10V ID=30A
V
GS
=5V ID=30A
0.007 0. 01
0.015
Ω
I
D(on)
On State Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
VGS=10V
60 A
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=30 A 25 S
C
iss
C
oss
C
rss
Input Capaci t ance
Out put Capa citance
Reverse Transfer
Capa cit an c e
VDS=25V f=1MHz VGS= 0 4000
1000
320
5400
1350
450
pF
pF
pF
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=15V ID=30A
R
G
=4.7 Ω VGS=5V
(see test circuit, figure 3)
35
24050320
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e-Sourc e Charge
Gate-Drain Charge
VDD=24V ID=60A VGS=5V 62
20
31
85 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Of f - voltage Rise T im e
Fall Time
Cross-over Time
VDD=24V ID=60A
R
G
=4.7 Ω VGS=5V
(see test circuit, figure 5)
60
80
150
80
110
200
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(∗) For ward O n Vo lt age ISD=60A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recover y
Time
Reverse Recover y
Charge
Reverse Recover y
Current
I
SD
= 60 A di/dt = 100 A/µs
V
DD
=24V Tj=150oC
(see test circuit, figure 5)
70
0.13
4
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Safe Operating Area ThermalImpedance
STP60NE03L-10
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OutputCharacteristics
Transconductance
GateCharge vs Gate-sourceVoltage
TransferCharacteristics
StaticDrain-sourceOn Resistance
CapacitanceVariations
STP60NE03L-10
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Normalized GateThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistancevs Temperature
STP60NE03L-10
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Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
STP60NE03L-10
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DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICALDATA
P011C
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Information furnished is believedto be accurateand reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringement ofpatents or otherrights of third parties which may resultsfrom its use. No
licenseis granted by implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for useascriticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy- AllRights Reserved
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