Page 1
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICAL R
DS(on)
= 0.012 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMP E RAT UR E
■ VERY LOW R
DS (on)
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ REGULAT O RS
■ DC-DC & DC-AC CONVERT E RS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP60N05-14
STP60N06-14
50 V
60 V
< 0.014 Ω
< 0.014 Ω
60 A
60 A
March 1996
1
2
3
TO-220
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
STP60N05-14 STP60N06-14
V
DS
Drain-Source Voltage (Vgs = 0) 50
60
V
V
DGR
Drain-Gate Voltage (Rgs = 20 KΩ)50
60
V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain-Current (continuous) at Tc = 25oC60A
I
D
Drain-Current (continuous) at Tc = 100oC50A
I
DM
(•) Drain-Current (Pulsed) 240 A
P
tot
Total Dissipation at Tc = 25oC 150 W/oC
Derating Factor 1
o
C
V
ISO
Insulation Withstand Voltage (DC) - V
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max Operating Junction Temperature 175
o
C
(•)Pulse width limited by safe operating area
1/5
Page 2
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max, δ < 1%)
60 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 25 V)
600 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max, δ < 1%)
150 mJ
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100 oC, pulse width limited by Tj max, δ < 1%)
50 A
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA V
GS
= 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc = 125 oC
250
1000µAµA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage V
DS
= VGS ID = 250 µA 234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 30 A
V
GS
= 10 V ID = 30 A Tc = 100oC
0.012 0.014
0.028ΩΩ
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
60 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 30 A 20 30 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 3900
950
250
4800
1200
320
pF
pF
pF
STP60N05-14/STP60N06-14
2/5
Page 3
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING O N
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 25 V ID = 30 A
R
G
= 4.7 Ω VGS = 10 V
30
18050250
ns
ns
(di/dt)
on
Turn-on Current Slope V
DD
= 40 V ID = 60 A
R
G
= 47 Ω VGS = 10 V
210 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V ID = 60 A V
GS
= 10 V 130
26
55
170 nC
nC
nC
SWITCHING O F F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V ID = 60 A
R
G
= 4.7 Ω VGS = 10 V
35
135
180
50
190
250
ns
ns
ns
SOURCE DRAIN DIO DE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
V
SD
(∗) Forward On Voltage ISD = 60 A VGS = 0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 60 A di/dt = 100 A/µs
V
DD
= 30 V Tj = 150 oC
150
0.56
9
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP60N05-14/ST P60N06-14
3/5
Page 4
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP60N05-14/STP60N06-14
4/5
Page 5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Ko ng - Ita ly - Japa n - Korea - Mal ay sia - Mal ta - Mor oc co - The Net her l ands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STP60N05-14/STP60N06-14
5/5
Loading...