Datasheet STP5NK50ZFP, STP5NK50Z, STD5NK50Z-1, STD5NK50Z Datasheet (SGS Thomson Microelectronics)

STB5NK50Z-1 - STP5NK50ZFP

STP5NK50Z - STD5NK50Z - STD5NK50Z-1

N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK

Zener-Protected SuperMESH™Power MOSFET

TYPE V

STP5NK50Z
STP5NK50ZFP
STD5NK50Z
STD5NK50Z-1
STB5BK50Z-1

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

500 V
500 V
500 V
500 V
500 V

(on) = 1.22 Ω

DS

DSS

R

DS(on)

< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω

I

D

4.4 A

4.4 A

4.4 A

4.4 A

4.4 A

Pw

70 W
25 W
70 W
70 W
70 W

REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most dem anding applications. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDmes h™ products.

TO-220 TO-220FP

3

2

1

I2PAK

3

1

DPAK

IPAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP5NK50Z P5NK50Z TO-220 TUBE
STP5NK50ZFP P5NK50ZFP TO-220FP TUBE
STD5NK50ZT4 D5NK50Z DPAK TAPE & REEL

STD5NK50Z-1 D5NK50Z IPAK TUBE
STB5NK50Z-1 B5NK50Z

I

2

PAK

TUBE

1/14April 2003

STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STD5NK50Z

STD5NK50Z-1

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

STP5NK50Z

STB5NK50Z-1

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 17.6 17.6 (*) 17.6 A
Total Dissipation at TC= 25°C

4.4 4.4 (*) 4.4 A

2.7 2.7 (*) 2.7 A

70 25 70 W

STP5NK50ZFP

500 V
500 V

Derating Factor 0.56 0.2 0.56 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 V

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤4.4A, di/dt ≤200A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150

-55to150

°C
°C

THERMAL DATA

TO-220

2

PAK

I

Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

TO-220FP DPAK

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

4.4 A

130 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occas ionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoi d the usage
of external components.

2/14

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15 V,ID= 2.2 A 3.1 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1 mA, VGS= 0 500 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 2.2 A 1.22 1.5 Ω

=25V,f=1MHz,VGS= 0 535

V

DS

75
17

VGS=0V,VDS= 0V to 400V 45 pF

VDD=250V,ID= 2.2 A
RG= 4.7Ω VGS=10V

15
10

(Resistive Load see, Figure 3)

=400V,ID= 4.4 A,

V

DD

V

=10V

GS

20

4

28 nC

10

µA
µA

pF
pF
pF

ns
ns

nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 250 V, ID= 2.2A
R

=4.7ΩVGS=10V

G

32
15

(Resistive Load see, Figure 3)

t

r(Voff)

t

= 400V, ID= 4.4A,

t

f

c

Fall Time
Cross-over Time

Off-voltage Rise Time

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

12
12
20

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 4.4 A, VGS=0
I

SD

VDD=30V,Tj= 150°C
(see test circuit, Figure 5)

=4.4 A, di/dt = 100A/µs

310

1425

9.2

when VDSincreases from 0 to 80%

oss

4.4

17.6

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

3/14

STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

Safe Operating Area For TO-220/DPAK/IPAK/I2PAK

Thermal Impedance For TO-220/DPAK/IPAK/I2PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Output Characteristics

4/14

Transfer Characteristics

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

Transconductance

Gate Charge vs Gate-so urc e V oltage Capacitance Variations

Static Drain-source On Resistance

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

5/14

STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperatu re

Maximum Avalanche Energy vs Temperature

6/14

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/14

STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/14

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

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STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

P032P_B

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0

MIN. TYP. MAX. MIN. TYP. MAX.

o

mm inch

o

8

o

0

o

0

10/14

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

0068771-E

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

C

A

C2

E

= =

L2

B2

= =

D

B3

2

1 3

L1

A1

L

B6

A3

B

B5

G

= =

11/14

STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

P011P5/E

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531
L1 3.48 3.78 0.137 0.149
L2 1.27 1.4 0.050 0.055

mm inch

C

A

A1

12/14

C2

B2

B

e

E

L1

L2

D

L

STP5NK50Z - STP5NK 50ZFP - STD5NK50Z - S TD5N K 50Z-1 - STB5NK50Z-1

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

All dimensions

areinmillimeters

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0. 291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

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STP5NK50Z - STP5NK50ZF P - STD5NK50Z - STD 5NK50Z-1 - STB5NK50Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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systems without express written approval of STMicroelectronics.

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