Datasheet STP5NC50FP, STP5NC50 Datasheet (SGS Thomson Microelectronics)

STP5NC50

STP5NC50FP

N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/TO-220FP

PowerMeshII MOSFET

TYPE V

DSS

R

DS(on)

I

D

STP5NC50 500V <1.5Ω 5.5A
STP5NC50FP 500V <1.5Ω 5.5A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 1.3Ω

DS

DESCRIPTION

The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re­finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGHSPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FORWELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVES

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP5NC50 STP5NC50FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns

V

ISO

T

stg

T

(•)Pulse width limitedby safe operating area
(1)I

≤5.5A, di/dt ≤100A/µs, VDD≤ V

SD

(*)Limited only by maximum temperature allowed

Drain-source Voltage (VGS= 0) 500 V
Drain-gate Voltage (RGS=20kΩ) 500 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C 5.5 5.5(*) A
Drain Current (continuos) at TC= 100°C 3.5 3.5(*) A

(●) Drain Current (pulsed) 22 22 A

TotalDissipation at TC=25°C

100 35 W

Derating Factor 0.8 0.28 W/°C

Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(BR)DSS,Tj≤TJMAX.

1/9May 2000

STP5NC50/FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °CUNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250µA, VGS=0

D

= Max Rating

V

DS

=0)

DS

GS

=0)

V

= Max Rating, TC= 125 °C

DS

= ±30V

V

GS

500 V

5.5 A

150 mJ

1 µA

50 µA

±100 nA

(1)

ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On StateDrain Current

V

DS=VGS,ID

= 10V, ID=2A

V

GS

V

DS>ID(on)xRDS(on)max,

= 250µA

VGS=10V

234V

1.3 1.5 Ω

5.5 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(1)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 80 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID= 2.5A

V

= 25V, f= 1 MHz, VGS=0

DS

4S

480 pF

11.5 pF

2/9

STP5NC50/FP

ELECTRICAL CHARACTERISTICS

(CONTINUED)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

TotalGate Charge

g

Gate-Source Charge 3 nC
Gate-Drain Charge 9 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 14 ns
Cross-over Time 20 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration =300 µs, duty cycle1.5 %.

2. Pulse width limited bysafe operating area.

Source-drain Current 5.5 A

(1)

Source-drain Current (pulsed) 22 A

(2)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 1.6 µC
Reverse Recovery Current 9 A

V

= 250V, ID= 2.5A

DD

= 4.7Ω VGS= 10V

R

G

(see test circuit, Figure 3)

V

= 400V, ID= 5.5A,

DD

= 10V

V

GS

V

= 400V, ID= 5.5A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

I

= 5.5A, VGS=0

SD

I

= 5.5A, di/dt =100A/µs,

SD

= 100V, Tj= 150°C

V

DD

(see test circuit, Figure 5)

14 ns
15 ns

17.5 24.5 nC

12 ns

1.6 V

360 ns

Safe OperatingArea for TO-220FPSafe Operating Area

3/9

STP5NC50/FP

Thermal Impedence for TO-220

Output Characteristics

Thermal Impedence for TO-220FP

Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/9

Gate Charge vs Gate-source Voltage Capacitance Variations

STP5NC50/FP

NormalizedGateThresholdVoltagevsTemperature

Source-drain Diode Forward Characteristics

Normalized On Resistance vs Temperature

5/9

STP5NC50/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load TestCircuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test CircuitFor Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP5NC50/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

7/9

STP5NC50/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

A

mm inch

E

D

8/9

B

L3

L6

L7

¯

H

L2

F1

F

G1

G

F2

123

L4

STP5NC50/FP

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subject to change withoutnotice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
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