Page 1
STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3
TYPE V
STP5NB90
STP5NB90 FP
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
900 V
900 V
= 2.3
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Ω
R
DS(on)
<2.5Ω
<2.5
Ω
I
D
5A
5A
Ω
- 5A - TO-220/TO-220FP
PowerMESH MOSFET
PRELIMINARY DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
1
3
2
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ UNINTERRUPTIBLEPOWERSUPPLY(UPS)
■ DC-DC& DC-AC CONVERTERSFOR
TELECOM,INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P5 NB90 STP 5NB 90FP
V
V
V
I
DM
P
dv/ dt(
V
T
(•) Pulse width limitedby safe operating area (1)I
(*) Limited only by maximum temperature allowed
September 1998
Drain-source Voltage (VGS=0) 900 V
DS
Dra in- gat e Volt age (RGS=20kΩ)
DGR
Gate -sourc e Voltage
GS
Drain Current (continuous) at Tc=25oC55(*)A
I
D
Drain Current (continuous) at Tc=100oC3.13.1(*)A
I
D
900 V
30 V
±
(•) Drain Current (pulsed) 20 20 A
Total Dissipation at Tc=25oC 125 40 W
tot
Derating Factor 1.0 0.32 W/
) Peak Dio de Recove ry volt age slop e 4.5 4.5 V/ns
1
Insulat ion Withstan d Voltage (DC) 2000 V
ISO
St orage Temperat ure -65 to 150
stg
Max. Op er a t ing J unctio n Temperatu re 150
T
j
SD
≤5 Α,
di/dt
≤
200A/µs, V
≤
DD
V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
Page 2
STP5NB90/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
Ther mal Resis t an ce Junc ti on-cas e Max 1 3.13
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperat ure For Soldering P ur p os e
l
62.5
0.5
300
Avalanche Cu rr ent, Repet it ive or Not-Re petitiv e 5 A
o
C/W
o
C/W
o
C/W
o
C
E
Single Pu lse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
318 mJ
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
900 V
Break d own Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- b ody Le akage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold
V
DS=VGSID
Voltage
Static Drain-source On
VGS=10V ID= 2.5 A 2.3 2.5 Ω
Resistanc e
On State Drain Curr ent VDS>I
VGS=10V
= 250µA
D(on)xRDS(on)max
345V
5A
µ
µA
A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
C
iss
C
oss
C
rss
2/6
Tr ansconduc tance
Input Capacit an c e
Out put Capacita nce
Reverse Transf er
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2.5A 2.5 4.1 S
VDS=25V f=1MHz VGS= 0 12 50
128
13
1625
170
20
pF
pF
pF
Page 3
STP5NB90/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
d(on)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Total Gate Charge
g
Gat e- Source Cha rge
gs
Gate-Drain Charge
gd
VDD= 450 V ID=2.5A
=4.7 Ω VGS=10V
R
G
VDD=720 V ID=5 A VGS=10V 33
18
9
10
13
26
13
47 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-ov er T i me
c
VDD= 720 V ID=5 A
=4.7 Ω VGS=10V
R
G
13
10
17
18
14
24
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Curr ent
(•)
Source-drain Curr ent
5
20
(pulsed)
(∗) F or ward On Voltage ISD=5A VGS=0 1.6 V
Reverse Reco v er y
rr
Time
Reverse Reco v er y
rr
= 5 A di/d t = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
700
5.4
Charge
Reverse Reco v er y
16
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
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Page 4
STP5NB90/FP
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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Page 5
TO-220FP MECHANICAL DATA
STP5NB90/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
5/6
Page 6
STP5NB90/FP
Information furnished is believed to be accurate andreliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights ofSTMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics –Printed in Italy – All RightsReserved
STMicroelectronics GROUP OF COMPANIES
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