Datasheet STP5NB80FP, STP5NB80 Datasheet (SGS Thomson Microelectronics)

STP5NB80



N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP

TYPE V

STP5NB80
STP5NB80 FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

800 V
800 V

= 1.8

DESCRIPTION

Using the latest high voltageMESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

Ω

R

DS(on)

<2.2Ω
<2.2

Ω

I

D

5A
5A

STP5NB80FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ SWITCHMODE POWER SUPPLIES(SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P5 NB80 STP 5NB 80FP

V

V

V

I

DM

P

dv/ dt(

V

T

(*) Limited only by maximum temperature allowed (1)ISD≤ 5A, di/dt ≤ 200 A/µs,VDD≤ V

January 1999

Drain-source Voltage ( VGS=0) 800 V

DS

Dra in- gat e Volt a ge (RGS=20kΩ)

DGR

Gate -source V oltage ± 30 V

GS

Dra in Curr en t (c ontinuous) a t Tc=25oC55(*)A

I

D

Dra in Curr en t (c ontinuous) a t Tc= 100oC 3.2 3.2( * ) A

I

D

800 V

(•) Dra in Curr en t (p uls ed) 20 20 A

Tot al Dis s ipation at Tc=25oC 110 40 W

tot

Der at ing Fact or 0.88 0.32 W/

) Peak Diode Recov ery voltag e s lop e 4 4 V/ ns

1

Insulation Withstand Voltage (DC)  2000 V

ISO

St orage Te mpe ra t ure -65 to 150

stg

Max. O perati ng Junction T em p e ra t ure 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/9

STP5NB80/FP

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Ther mal Resis t an ce Junc ti on-cas e Max 1.13 3. 1
Ther mal Resis t an ce Junc ti on-ambien t M a x

Thermal Resistance Case-sink Typ
Maximum Le ad Tem peratu r e F or Sold er ing Purp ose

l

TO-220 TO220-FP

62.5

0.5

300

o

C/W

o

C/W

o

C/W

o

C

Symbol P ara meter Mi n .

I

AR

E

ELECTRICAL CHARACTERISTICS

Avalanche Curr ent, Repetitive or Not- Re petitiv e
(pulse width l imited by T

Single Pu lse Avalanche Energ y

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

(T

case

=25oC unless otherwisespecified)

Value

Max.

Value

5A

300 mJ

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own Vo lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Cu rr ent (V

GS

Gat e- b ody Leakage
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

= Max Rating Tc=125oC

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold

V

DS=VGSID

Voltage
Static Drain-source O n

VGS=10V ID= 2.5 A 1.8 2.2 Ω

Resistanc e
On St ate Drain Current VDS>I

VGS=10V

= 250 µA

D(on)xRDS(on)max

345V

5A

Unit

µA

A

µ

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

C

iss

C

oss

C

rss

2/9

Tr ansconduc tance
Input Cap aci t ance

Out put Capacit ance
Reverse T ransf er
Capacitance

VDS>I

D(on)xRDS(on)maxID

=2.5A 1.5 4 S

VDS=25V f=1MHz VGS= 0 1050

135

15

pF
pF
pF

STP5NB80/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on delay Time

t

Rise T im e

r

VDD= 400 V ID=3A

=4.7 Ω VGS=10V

R

G

18

9

(see t est circuit, fi gure 3)

Q
Q
Q

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 480 V ID=5.6A VGS=10V 30

9

14

42 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off -voltage R ise Time
Fall Time

f

Cross-ov er Ti me

c

VDD= 640 V ID=5.6A

=4.7 Ω VGS=10V

R

G

(see t est circuit, fi gure 5)

14
14
21

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

5

20

(pulsed)

(∗) F orwar d O n V oltage ISD=5A VGS=0 1.6 V

Reverse R ecover y

rr

Time
Reverse R ecover y

rr

=5.6A di/dt=100A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see t est circuit, fi gure 5)

700

5
Charge
Reverse R ecover y

14

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP5NB80/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedance for TO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP5NB80/FP

Gate Charge vs Gate-sourceVoltage

Normalized Gate ThresholdVoltage vs
Temperature

CapacitanceVariations

Normalized On Resistance vsTemperature

Source-drainDiode Forward Characteristics

5/9

STP5NB80/FP

Fig. 1: Unclamped InductiveLoad Test Circuit

Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad

Fig. 2: Unclamped InductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times

6/9

TO-220 MECHANICAL DATA

STP5NB80/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP5NB80/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP5NB80/FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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