Datasheet STP4NB80FP Datasheet (SGS Thomson Microelectronics)

STP4NB80

®

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP

TYPE V

STP4NB80
STP4NB80FP

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS(on)

DSS

800 V
800 V

= 3 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

R

DS(on)

3.3 Ω

3.3 Ω

I

4 A
4 A

D

STP4NB80FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMAT I C DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED S WITCHI NG

■ SWITCH MODE PO W E R S UPPLIES (SM PS )

■ DC-AC CONVERT E RS F OR W ELDI NG

EQUIPMENT AND UN INTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MA XIMU M RAT INGS

Symbol Parameter Value Unit

STP4NB80 STP4NB80FP

V

V

V

I

DM

P

dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns

V

T

(•) Pulse width limited by safe operating area (1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V
(*) Limited only by maximum temperature allowed

September 2001

Drain-source Voltage (VGS = 0) 800 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC 4 4(*) A

D

Drain Current (continuous) at Tc = 100 oC 2.4 2.4(*) A

I

D

800 V

(•) Drain Current (pulsed) 16 16 A

Total Dissipation at Tc = 25 oC 100 35 W

tot

Derating Factor 0.8 0.28 W/

Insulation Withstand Voltage (DC)  2500 V

ISO

Storage Temperature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP4NB80/FP

THERMAL DATA

TO-220 TO220-FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTI CS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 1.25 3.6
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max)

j

DD

= 50 V)

62.5

0.5

300

4A

230 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specif ied)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

800 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS ID = 250 µA

V

DS

VGS = 10V ID = 2 A 3 3.3 Ω

345V

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

4A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 2 A 1.5 2.9 S

= 0 700

GS

95

920
126

9

12

µA
µA

pF
pF
pF

2/9

STP4NB80/F P

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Turn-on delay Time
Rise Time

r

V

= 400 V ID = 2 A

DD

RG = 4.7 Ω VGS = 10 V

14

20

8

12

ns
ns

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 640 V ID = 4 A V

DD

= 10 V 21

GS

7
9

29 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 640V ID = 4 A

DD

= 4.7 Ω VGS = 10 V

R

G

12

9

16

17
13
22

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

4

16

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD =4 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 4 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

600

3.3

Charge

I

RRM

Reverse Recovery

11

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

nC
nC

ns
ns
ns

A
A

ns

µC

A

Safe Operating A rea for TO- 220 Safe Operating Ar ea for TO-220FP

3/9

STP4NB80/FP

Thermal Impedance for TO- 220

Output Charact eris t ics

Thermal Impedance forTO-220FP

Transfer Charact eris t ics

Transconductanc e

4/9

Static Drain-source O n Resis tance

STP4NB80/F P

Gate Charge vs Gate- source Volt ag e

Normalized Gate Thr eshold Volt age vs
Temperature

Capacitance Variations

Normalized On Resistance vs Temper atur e

Source-drain Diode Forward Charact er ist ics

5/9

STP4NB80/FP

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switc hing Times Tes t Cir cuit s Fo r
Resistive Load

Fig. 2: Unclamped Inductive W av efor m

Fig. 4: Gate Charge tes t Cir cuit

Fig. 5: Test Circuit For Inductiv e Load Sw itching
And Diode Recovery Times

6/9

TO-220 MECHANICAL DATA

STP4NB80/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

M 2.60 0.102

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

P011CI

7/9

STP4NB80/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4. 6 0.173 0.181

B 2.5 2. 7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

8/9

STP4NB80/F P

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.

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