
STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
-30V/-12A,R
DS(ON)
=9mΩ
@VGS=-20V
-30V/-12A,R
DS(ON)
=10mΩ
@VGS=-10V
-30V/-10A,R
DS(ON)
=15mΩ
@VGS=-5V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximumDC
currentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
TheSTP4407istheP-Channellogicenhancementmodepowerfieldeffecttransistor
isproducedusinghighcelldensity,DMOStrenchtechnology.
Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistance.
Thesedevicesareparticularlysuitedforlowvoltageapplicationsuchascellular
phoneandnotebookcomputerpowermanagementandotherbatterpowered
circuitswherehigh-sideswitching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
M ARKING
MARKING
MARKING
Copyright©2007,StansonCorp.
STP44072009.V1

STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
ContinuousDrainCurrent(TJ=150
℃
)
ContinuousSourceCurrent(DiodeConduction)
OperationJunctionTemperature
ThermalResistance-JunctiontoAmbient
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
Copyright©2007,StansonCorp.
STP44072009.V1

STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Static
Static
Static
Static
Drain-Source
BreakdownVoltage
ZeroGateVoltage
DrainCurrent
Drain-sourceOnResistance
V
GS
=-20V,ID=-12A
V
GS
=-10V,ID=-12A
V
GS
=-5V,ID=-10A
Dynamic
Dynamic
Dynamic
Dynamic
V
DS
=-15V,V
GS
=0V
f=1MHz
Reverse
TransferCapacitance
V
DD
=15V,RL=1.25Ω
ID=-1A,V
GEN
=-10V
RG=3Ω
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25℃Unlessotherwisenoted)
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
Copyright©2007,StansonCorp.
STP44072009.V1

STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
Copyright©2007,StansonCorp.
STP44072009.V1

STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
Copyright©2007,StansonCorp.
STP44072009.V1

STP
STP
STP
STP4
4
4
44
4
4
407
0 7
07
07
PChannelEnhancementModeMOSFET
-
12A
PACKAGE
PACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINESOP-8P
S OP-8P
SOP-8P
SOP-8P
120BentleySquare,MountainView,Ca94040USA
TEL:(650)9389294FAX:(650)9389295
Copyright©2007,StansonCorp.
STP44072009.V1