Page 1
STP4NB80
N - CHANNEL 800V - 3Ω - 4A TO-220/TO-220FP
TYPE V
STP4NB80
STP4NB80FP
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
800 V
800 V
=3Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
DS(on)
3.3 Ω
3.3 Ω
I
D
4A
4A
STP4NB80FP
PowerMESH MOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGHCURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P4NB8 0 ST P4NB 80FP
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse widthlimited by safe operating area (1)ISD≤4 A, di/dt ≤ 200 A/µs,VDD≤ V
(*)
Limited only by maximum temperature allowed
March 2000
Dra in- sour c e Volt age (VGS= 0) 800 V
DS
Dra in- gat e Voltage (RGS=20kΩ) 800 V
DGR
Gat e-source Voltage
GS
Dra in Cu rr ent (contin uous ) a t Tc=25oC 4 4(*) A
I
D
Dra in Cu rr ent (contin uous ) a t Tc=100oC 2.4 2.4(* ) A
I
D
30 V
±
(•) Dra in Cu rr ent (pulsed) 16 16 A
Tot al Dissipat ion at Tc=25oC 100 35 W
tot
Der ati ng Fact or 0.8 0.28 W/
1) Peak Diode Recov ery volt age sl ope 4.5 4.5 V/ns
Insulation Withstand Voltage (DC) 20 00 V
ISO
St orage Temperat ure -65 to 150
stg
Max. Operating Junct ion Temper atur e 150
T
j
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/9
Page 2
STP4NB80/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Ma x 1.25 3 . 6
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead T empera tur e F or S o ldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
4A
230 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 800 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
=± 30 V
GS
1
50
100 nA
±
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250µA 345V
Sta t ic Drain-s our c e On
VGS=10V ID=2A 3 3.3
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=2A 1.5 2.9 S
VDS=25V f=1MHz VGS= 0 700
95
9
920
126
12
µA
µA
Ω
pF
pF
pF
2/9
Page 3
STP4NB80/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
Turn-on Time
Rise Time
r
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=400V ID=2A
R
=4.7
G
Ω
VGS=10V
14
8
VDD= 640 V ID=4A VGS=10V 21
7
9
20
12
29 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise T im e
Fall T ime
f
Cross-over Tim e
c
VDD= 640V ID=4A
=4.7 Ω VGS=10V
R
G
12
16
17
9
13
22
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
4
16
(pulsed)
(∗)ForwardOnVoltage ISD=4 A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD=4A di/dt=100A/µs
= 100 V Tj=150oC
V
DD
600
3.3
Charge
Reverse Recovery
11
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
3/9
Page 4
STP4NB80/FP
ThermalImpedancefor TO-220
OutputCharacteristics
ThermalImpedanceforTO-220FP
TransferCharacteristics
Transconductance
4/9
Static Drain-sourceOn Resistance
Page 5
STP4NB80/FP
Gate Charge vs Gate-sourceVoltage
NormalizedGate ThresholdVoltage vs
Temperature
CapacitanceVariations
NormalizedOn Resistancevs Temperature
Source-drainDiode Forward Characteristics
5/9
Page 6
STP4NB80/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
ResistiveLoad
Fig. 2: Unclamped InductiveWaveform
Fig. 4: Gate Chargetest Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/9
Page 7
TO-220 MECHANICAL DATA
STP4NB80/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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Page 8
STP4NB80/FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
8/9
Page 9
STP4NB80/FP
Information furnishedis believedto beaccurate and reliable. However, STMicroelectronics assumes no responsibilityforthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice. This publication supersedes and replacesall information previouslysupplied.STMicroelectronicsproducts
are not authorized for use as critical components in lifesupport devices or systemswithout express written approval of STMicroelectronics.
The STlogo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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9/9
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