Page 1
STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE V
STP4NB50
STP4NB50FP
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS
DSS
500 V
500 V
(on) = 2.5 Ω
R
DS(on)
< 2.8 Ω
< 2.8 Ω
I
D
3.8 A
2.5 A
DESCRIPTION
Using the latest high voltage ME SH OVERLAY™
process, STMicroelectronics has designed an a dvanced family of power MOSFETs with outstanding
performances. The new patent pending strip lay out
coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
TO-220
1
TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NB50 STP4NB50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
stg
T
j
(•)Pulse width limited by safe operating area
April 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 15.2 15.2 A
Total Dissipation at TC= 25°C
3.8 2.5 A
2.4 1.6 A
80 35 W
Derating Factor 0.64 0.28 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD≤4A,di/dt≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
1/7
Page 2
STP4NB50 - ST P4N B 50FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 500 V
3.8 A
220 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
DS
VDS= Max Rating, TC= 125 °C
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 1.9 A
= 250µA
234V
2.5 2.8 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 62 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID= 1.9 A
V
=25V,f=1MHz,VGS=0
DS
2.3 S
400 pF
7.5 pF
2/7
Page 3
STP4NB50 - STP4NB50FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 6.5 nC
Gate-Drain Charge 5 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 5 ns
Cross-over Time 14 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 3.8 A
(2)
Source-drain Current (pulsed) 15.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 980 nC
Reverse Recovery Current 9 A
= 250V, ID= 1.9 A
DD
R
=4.7ΩVGS= 10V
G
(see test circuit, Figure 3)
V
= 400V, ID= 3.8 A,
DD
VGS= 10V
V
= 400V, ID= 3.8 A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD= 3.8 A, VGS=0
I
= 3.8 A, di/dt = 100A/µs,
SD
VDD= 100V, Tj= 150°C
(see test circuit, Figure 5)
11 ns
15 21 nC
8ns
1.6 V
245 ns
3/7
Page 4
STP4NB50 - ST P4N B 50FP
Fig. 2: Unclamped Inductive W av eformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/7
Page 5
TO-220 MECHANICAL DATA
STP4NB50 - STP4NB50FP
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
5/7
Page 6
STP4NB50 - ST P4N B 50FP
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP M AX. MIN. TYP. MAX.
mm. inch
6/7
E
A
D
B
L3
L6
L7
F1
F
G1
H
G
F2
123
L2
L5
L4
Page 7
STP4NB50 - STP4NB50FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
STMicroelectronics GROUP OF COMPANIES
© http://www.st.com
7/7
Loading...