Datasheet STP4NB50FP, STP4NB50 Datasheet (SGS Thomson Microelectronics)

STP4NB50

STP4NB50FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

PRELIMINARY DATA

TYPE V

STP4NB50
STP4NB50FP

■ TYPICALR

■ 100% AVALANCHETESTED

■ VERYLOW INTRINSICCAPACITANCES

■ GATECHARGEMINIMIZED

■ EXTREMELY HIGH dv/dt CAPABILITY

DS(on)

DSS

500 V
500 V

=2.5 Ω

R

DS(on)

<2.8Ω
<2.8Ω

I

D

3.8 A

2.5 A

DESCRIPTION

Using the latest high voltage MESH
OVERLAYprocess, SGS-Thomson has
designed an advanced family of Power
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilitiesand
unrivalled gate charge and switching
characteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ SWITCHMODEPOWER SUPPLIES(SMPS)

■ DC-ACCONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE
P

ABSOLUTE MAXIMUM RATINGS

OWERSUPPLIESAND MOTORDRIVE

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

Symb o l Para meter Value Uni t

ST P4 NB50 S T P4NB50F P

V

V

V

I

DM

P

dv/dt(

V

T

(•) Pulse width limitedby safe operating area (1)ISD≤ 4A, di/dt ≤ 200 A/µs, VDD≤ V

March 1998

This ispreliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source V oltage (VGS=0) 500 V

DS

Drain- gate Voltage ( RGS=20kΩ)

DGR

Gat e- sourc e V o lt age ± 30 V

GS

I

Drain Current ( c on t in uous) a t Tc=25oC3.82.5A

D

I

Drain Current ( c on t in uous) a t Tc=100oC2.41.6A

D

500 V

(•) Drain Cur rent (puls ed ) 15.2 15.2 A

Tot al D issipati on at Tc=25oC8035W

tot

Derat in g Factor 0.64 0.28 W/

1) Peak Di ode Re c overy voltage slope 4.5 4.5 V/ns

Ins ulation With s t a nd V oltage (DC)  2000 V

ISO

Sto rage Temperature -65 to 150

stg

T

Max. O peratin g J u nc t io n Temper at u r e 150

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/7

STP4NB50/FP

THERMAL DATA

TO-220 TO220-FP

R

thj-case

R

thj- amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Paramete r Max Value Uni t

I

AR

E

Ther mal Resis t an c e J unction-ca se Max 1.56 3.57
Ther mal Resis t an c e J unction-am bie nt Max

Ther mal Resis t an c e C ase-si nk T yp
Maximum Lea d Tem peratu re For Solderi ng P urp os e

l

Avalanch e C ur rent, R ep et it i v e or Not-Re petitiv e
(pulse width limited b y T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

3.8 A

220 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

500 V

Breakdown Voltage

I

DSS

I

GSS

Zer o G at e Voltage
Drain Cur rent (V

GS

Gat e-body Le ak a ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125oC

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

345V

Voltage

R

DS(on)

Stati c D rain-source On

VGS=10V ID= 1.9 A 2.5 2.8 Ω

Resistance

I

D(on)

On St at e Drain Cu rr e nt VDS>I

D(on)xRDS(on)max

3.8 A

VGS=10V

DYNAMIC

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconduc tanc e

C

C

C

Input Ca pac i t ance

iss

Out put Capacitance

oss

Reverse T ransf er

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=1.9 A 1.2 2 .3 S

VDS=25V f=1MHz VGS= 0 400

62

7.5

520

84
10

µA
µA

pF
pF
pF

2/7

STP4NB50/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

t

d(on)

Turn-on Tim e

r

Rise T ime

t

VDD=250V ID=1.9A

=4.7 Ω VGS=10V

R

G

11

8

(see test circuit, figure 3)

Q

Q

Q

Total Gate Charge

g

Gat e-Sou rc e Charge

gs

Gate-Drain Charge

gd

VDD=400V ID=3.8A VGS=10V 15

6.5
5

SWITCHINGOFF

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

t

r(Voff)

t

t

Of f - voltag e Ris e Tim e
Fall Time

f

Cross-ov er Tim e

c

VDD=400V ID=3.8A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

8
5

14

SOURCE DRAIN DIODE

Symbol Parameter Te st Cond ition s Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) F orwar d O n Volt age ISD=3.8 A VGS=0 1.6 V

Reverse R ecovery

rr

Time
Reverse R ecovery

rr

=3.8 A di/dt = 100 A/µs

I

SD

=100V Tj=150oC

V

DD

(see test circuit, figure 5)

245

980
Charge
Reverse R ecovery

8

Current

17
12

21 nC

12

9

20

3.8

15.2

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/7

STP4NB50/FP

Fig. 1: Unclamped InductiveLoad Test Circuit

Fig. 3: SwitchingTimesTest CircuitsFor

ResistiveLoad

Fig. 2: Unclamped InductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode RecoveryTimes

4/7

TO-220 MECHANICAL DATA

STP4NB50/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

5/7

STP4NB50/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039

F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

6/7

STP4NB50/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsarenot authorizedfor use as critical componentsin life support devices orsystems without express
written approval ofSGS-THOMSON Microelectonics.

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

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