Page 1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STP4NA60FP 600 V < 2.2 Ω 2.7 A
R
DS(on)
I
D
STP4NA60FP
PRELIMINARY DATA
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOWINTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
=1.85 Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge ter mination concur to give
the device low RDS(on) and ga te charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Value Uni t
V
V
DGR
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1997
Drain-source Voltage (VGS=0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ)600V
Gate-sourc e Volt age ± 30 V
GS
Drain Current (c ont inuo us) a t Tc=25oC2.7A
I
D
Drain Current (c ont inuo us) a t Tc=100oC1.8A
I
D
(•) Drain Current (puls ed) 17.2 A
Total Dissipat i on at Tc=25oC35W
tot
Derat ing Factor 0.28 W/
Insul at ion W ithstand Voltage (DC) 2000 V
ISO
Stora ge Temperature -65 to 15 0
stg
Max. Operat ing J unc tion Tem perat u r e 150
T
j
o
C
o
C
o
C
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STP4NA60FP
THERMAL DATA
R
thj-case
R
thj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
Ther mal Resistance Ju nct ion-cas e Max
Ther mal Resistance Ju nct ion-ambien t Max
Ther mal Resistance Ca se-s i nk Typ
Maximum Lead Temp erat u r e For Soldering Purpos e
l
Avalanche Current, Repetit iv e or Not-Repe t it ive
(pulse width limited by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
3.57
62.5
0.5
300
4.3 A
95 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS= 0 600 V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gat e- bod y Leakage
Current (V
DS
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
= ± 30 V ± 100 nA
GS
25
250
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
Gat e Thre shold Voltage VDS=VGSID=250µA2.2533.75V
St at ic Drain-so ur ce O n
1.85 2.2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
ReverseTransfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=2A 2.5 3.7 S
VDS=25V f=1MHz VGS= 0 700
100
24
910
130
35
µA
µA
pF
pF
pF
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Page 3
STP4NA60FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
V
R
=300V ID=2A
DD
=47 Ω VGS=10V
G
VDD=480V ID=2A VGS=10V 32
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over T im e
c
VDD=480V ID=4A
=47 Ω VGS=10V
R
G
(see test cir cuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=4.3A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 4 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
(see circuit, figure 5)
Charge
Reverse Recovery
Current
23
60
7
14
45
17
70
480
6
25
35
85
45 nC
60
25
95
4.3
17.2
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/5
Page 4
STP4NA60FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
4/5
Page 5
STP4NA60FP
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof use of such informationnor for any infringementof patents or otherrights of thirdparties which may results fromits use.No
license isgranted byimplication orotherwise under anypatentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject tochange without notice. This publicationsupersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useas criticalcomponentsinlife supportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics -Printed in Italy - All Rights Reserved
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