Page 1
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
DESCRIPTION
FEATURE
FEATURE
FEATURE
FEATURE
-20V/-8.5A,R
DS(ON)
=20mΩ(Typ.)
@VGS=-4.5V
-20V/-8.0A,R
DS(ON)
=25mΩ
@VGS=-2.5V
-20V/-5.0A,R
DS(ON)
=35mΩ
@VGS=-1.8V
Superhighdensitycelldesignfor
extremelylowR
DS(ON)
Exceptionalon-resistanceandmaximum
DCcurrentcapability
SOP-8packagedesign
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP4931isthedualP-Channellogicenhancementmodepowerfieldeffecttransistors
areproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensity
processisespeciallytailoredtominimizeon-stateresistance.Thesedevicesare
particularlysuitedforlowvoltageapplication,notebookcomputerpowermanagement
andotherbatterypoweredcircuitsWherehight-sideswitching.
PIN
C ONFIGURATION
PIN
CONFIGURATION
PIN
PINCONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
�
PART
PART
PART
PARTMARKING
SOP-8
SOP-8
SOP-8
SOP-8
M ARKING
MARKING
MARKING
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 2
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Unit
Unit
Unit
Unit
Drain-SourceVoltage
V
DSS
-20
V
Gate-SourceVoltage
V
GSS
±
12
V
ContinuousDrainCurrent
(TJ=150
℃
)
TA=25℃
TA=70
℃
I
D
-8.5
-7.0
A
PulsedDrainCurrent
I
DM
-30
A
ContinuousSourceCurrent
(DiodeConduction)
I
S
-2.3
A
PowerDissipation
TA=25℃
TA=70
℃
P
D
2.8
1.8
W
OperationJunctionTemperature
TJ-55/150
℃
StorgaeTemperatureRange
T
STG
-55/150
℃
ThermalResistance-JunctiontoAmbient
Rθ
JA
70
℃
/W
ABSOULTE
ABSOULTE
ABSOULTEMAXIMUM
M AXIMUM
MAXIMUM
MAXIMUMRATINGS
R ATINGS
RATINGS
RATINGS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 3
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-SourceBreakdown
Voltage
V
(BR)DSSVGS
=0V,ID=-250uA
-20
V
GateThresholdVoltage
V
GS(th)VDS
=V
GS,ID
=-250uA
-0.35
-0.9
V
GateLeakageCurrent
I
GSS
V
DS
=0V,V
GS
=
±
12V
±
100
nA
ZeroGateVoltageDrain
Current
I
DSS
TJ=55
℃
V
DS
=-16V,V
GS
=0V
-1
uA
V
DS
=-20V,V
GS
=0V
-10
On-StateDrainCurrent
I
D(on)VDS=-
5V,V
GS
=4.5V
-250A
Drain-sourceOn-Resistance
R
DS(on)
V
GS
=-4.5V,ID=-8.5A
V
GS
=-2.5V,ID=-8.0A
V
GS
=-1.8V,ID=-5.0A
0.016
0.020
0.028
0.020
0.025
0.035
Ω
ForwardTranConductance
g
fs
V
DS
=-5.0V,ID=-10A
36
S
DiodeForwardVoltage
VSDIS=-2.5A,V
GS
=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
TotalGateCharge
Q
g
V
DS
=-10V,V
GS
=-5.0V
I
D
≡
-10A
30
45
nC
Gate-SourceCharge
Qgs4.5
Gate-DrainCharge
Q
gd
8.0
InputCapacitance
Ciss
VDS=-15V,VGS=0V
f=1MHz
2670
pF
OutputCapacitance
Coss
520
ReverseTransferCapacitance
Crss
480
Turn-OnTime
t
d(on)
tr
V
DD
=-10V,RL=15
Ω
ID=-1.0A,V
GEN
=-4.5V
RG=6
Ω
25
40
nS
45
70
Turn-OffTime
t
d(off)
tf
145
240
70
115
ELECTRICAL
ELECTRICAL
ELECTRICALCHARACTERISTICS
C HARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS(Ta=25
℃
Unlessotherwisenoted)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 4
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 5
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
TYPICAL
TYPICAL
TYPICAL
TYPICALCHARACTERICTICS
C HARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS(25
℃
UnlessNote)
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 6
STP
STP
STP
STP4931
4 931
4931
4931
DualPChannelEnhancementModeMOSFET
-
8.5A
SOP-8
SOP-8
SOP-8
SOP-8PACKAGE
P ACKAGE
PACKAGE
PACKAGEOUTLINE
O UTLINE
OUTLINE
OUTLINE
STANSONTECHNOLOGY
120BentleySquare,MountainView,Ca94040USA
www.stansontech.com
Copyright©2007,StansonCorp.
STP49312009.V1
Page 7
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