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STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
DESCRIPTION
Part
Part
Part
Part Number
Number
Number
Number
Package
Package
Package
Package
Part
Part
Part
Part Marking
Marking
Marking
Marking
STP4803
SOP-8
STP4803
FEATURE
FEATURE
FEATURE
FEATURE
-30V/- 5 . 2 A, R
DS(ON)
= 38m Ω (Typ.)
@V GS =-10V
-30V/-4. 0 A, R
DS(ON)
= 52 m Ω
@V GS = - 4.5 V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power m anagement, and other battery powered circuits.
PIN
CONFIGURATION
PIN
CONFIGURATION
PIN
PIN CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
�
�
�
�
�
PART
PART
PART
PART MARKING
SOP-8
SOP-8
SOP-8
SOP-8
ORDERING
ORDERING
ORDERING
ORDERING INFORMATION
MARKING
MARKING
MARKING
INFORMATION
INFORMATION
INFORMATION
※ Process Code : A ~ Z ; a ~ z
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 2
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
ABSOULTE
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±
20
V
Continuous Drain Current
(TJ=150
℃
)
T A =25 ℃
TA=70
℃
I
D
-5.2
-4.2
A
Pulsed Drain Current
I
DM
-30
A
Continuous Source Current
(Diode Conduction)
I
S
-2.3
A
Power Dissipation
T A =25 ℃
TA=70
℃
P
D
2.7
1.8
W
Operation Junction Temperature
TJ-55/150
℃
Storgae Temperature Range
T
STG
-55/150
℃
Thermal Resistance-Junction to Ambient
R
θ
JA
70
℃
/W
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 3
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
ELECTRICAL
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source Breakdown
Voltage
V
(BR)DSSVGS
=0V,ID=-250uA
-30
V
Gate Threshold Voltage
V
GS(th)VDS
=V
GS,ID
=-250 uA
-1.0
-3.0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=
±
20V
±
100
nA
Zero Gate Voltage Drain
Current
I
DSS
TJ=55
℃
V
DS
=-30V,V
GS
=0V
-1
uA
V
DS
=-30V,V
GS
=0V
-5
On-State Drain Current
I
D(on)VDS=-
5V,V
GS
=10V
-250A
Drain-source On-Resistance
R
DS(on)
V
GS
=-10V, ID=-5.2A
V
GS
=-4.5V,ID=-4.0A
0. 0 38
0. 0 52
Ω
Forward Tran Conductance
g
fs
V
DS
=-10V,ID=-5.0A
9.0SDiode Forward Voltage
VSDIS=-2.0A,V
GS
=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Q
g
V
DS
=-15V,V
GS
=-10V
I
D
≡
-5.0A
15
25
nC
Gate-Source Charge
Qgs4.0
Gate-Drain Charge
Q
gd
2.0
Input Capacitance
Ciss
V DS = -15 V,VGS= 0 V
f=1MHz
680
pF
Output Capacitance
Coss
120
Reverse Transfer C apacitance
Crss
75
Turn-On Time
t
d(on)
tr
V
DD
=15V,RL=15
Ω
ID=-1.0A,V
GEN
=-10V
RG=6
Ω
7.0
15
nS
10
20
Turn-Off Time
t
d(off)
tf
40
80
20
40
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25
℃
Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 4
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS ( 25 ℃ Unless Note )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 5
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS ( 25 ℃ Unless Note )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 6
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS ( 25 ℃ Unless Note )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 7
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2 A
SOP-8
SOP-8
SOP-8
SOP-8 PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
Page 8
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