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STP45NF06L
STB45NF06L
N-CHANNEL 60V - 0.022Ω -38ATO-220/D2PAK
STripFET™ II POWER MOSFET
TYPE V
STP45NF06L
STB45NF06L
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOGIC LEVEL G ATE DRIVE
DS
DSS
60 V
60 V
(on) = 0.022Ω
R
DS(on)
< 0.028Ω
< 0.028Ω
I
D
38 A
38 A
DESCRIPTION
This Power Mosfet is the latest develo pment of
STMicroelectronics unique “Single Feature
™” strip-based process. The resulting t r an-
Size
sistor show s extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CON TROL, AUDIO AMPLIFIERS
■ DC-DC & DC-A C CONVERTERS
3
1
D2PAK
TO-220
2
1
INTERNAL SCHE M ATIC DIAGRAM
3
ABSOLUTE MAX IMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
60 V
60 V
Gate- source Voltage ±16 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 152 A
Total Dissipation at TC= 25°C
38 A
26 A
80 W
Derating Factor 0.53 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1) ISD≤38A, di/dt ≤300A/µs, VDD≤ V
–55 to 175 °C
(BR)DSS,Tj≤TJMAX.
1/10September 2002
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STP45NF06L - S TB45N F 06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTE RISTICS (TCASE = 25 °C UNLE S S OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 60 V
38 A
135 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±16V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
=5V,ID=19A
V
GS
=10V,ID=19A
V
GS
= 250µA
1 1.7 2.5 V
0.024 0.03 Ω
0.022 0.028
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=19 A 24 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 217 pF
Reverse Transfer
Capacitance
=25V,f=1MHz,VGS=0
DS
1600 pF
62 pF
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STP45NF06L - S TB45NF06L
ELECTRICAL CHARACTE RISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 105 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time (see test circuit, Figure 5) 55 ns
Cross-over Time 85 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 38 A
(2)
Source-drain Current (pulsed) 152 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=30V,ID=19A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
=48V,ID= 38A,
V
DD
V
=5V
GS
= 30V, ID=19A,
V
DD
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
R
=4.7Ω, VGS= 10V
G
D
=38A
ISD= 38A, VGS=0
= 38A, di/dt = 100A/µs,
I
SD
V
=100V,Tj=150°C
DD
(see test circuit, Figure 5)
30 ns
23
31
7
10
65
25
50 ns
1.5 V
70
110
4
nC
nC
nC
ns
ns
ns
nC
A
Thermal ImpedenceSafe Operating Area
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STP45NF06L - S TB45N F 06L
Output Characteristics
Transconductance Static Drain-source On Resistance
Transfer Characteristics
Gate Charge vs Gate-so urc e Voltage
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Capacitance Variations
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STP45NF06L - S TB45NF06L
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Loa d Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
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E
TO-220 MECHANICAL DATA
P011C
STP45NF06L - S TB45NF06L
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
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D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
3
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STP45NF06L - S TB45NF06L
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1. 197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12 .1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* o n sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STP45NF06L - S TB45N F 06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility f or t he
consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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