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STP45NF06
N-CHANNEL 60V - 0.022Ω - 38A TO-220
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE V
DSS
STP45NF06 60V <0.028
■ TYPICAL R
■ EXCEPTIONAL dv/d t CAPABILITY
(on) = 0.022Ω
DS
R
DS(on)
I
D
Ω
38A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™” strip-based process. The re sulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
November 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ±20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 152 A
Total Dissipation at TC = 25°C
38 A
26 A
80 W
Derating Factor 0.53 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤38A, di/dt ≤300A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
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STP45NF06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.87 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
= 25 °C, ID = IAR, VDD = 50 V)
j
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
= 0)
DS
GS
= 0)
V
= Max Rating, TC = 125 °C
DS
= ±20V
V
GS
60 V
38 A
135 mJ
1µA
10 µA
±100 nA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= VGS, ID = 250µA
DS
= 10 V, ID = 19 A
V
GS
V
> I
D(on)
x R
DS
VGS=10V
DS(on)max,
234V
0.022 0.028
45 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
V
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 215 pF
Reverse Transfer
Capacitance
I
D
V
DS
=19 A
DS
x R
D(on)
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
24 S
1730 pF
63 pF
Ω
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STP45NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge
Gate-Source Charge 9 nC
Gate-Drain Charge 15 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time 20 ns
Off-voltage Rise Time
Fall Time (see test circuit, Figure 5) 42 ns
Cross-over Time 60 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 38 A
(1)
Source-drain Current (pulsed) 152 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 260 nC
Reverse Recovery Current 5.5 A
= 30V, ID = 19A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
V
= 48V, ID = 38A,
DD
VGS = 10V
VDD = 30V, ID = 19A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
Vclamp =48V, I
R
=4.7Ω, V
G
GS
=38A
D
= 10V
ISD = 38A, VGS = 0
ISD = 38A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
20 ns
43 58 nC
50 ns
45 ns
1.5 V
95 ns
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STP45NF06
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
4/6
Page 5
E
TO-220 MECHANICAL DATA
STP45NF06
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
5/6
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STP45NF06
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of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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