Datasheet STP45NEO6 Datasheet (SGS Thomson Microelectronics)

STP45NE06

STP45NE06FP

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP

STripFET POWER MOSFET

PRELIMINARY DATA

■ TYPICALR

DS(on)

=0.022 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ LOW GATE CHARGE 100

o

C

■ APPLICATIONORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size ”
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturingreproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ DC-DC& DC-AC CONVERTERS



INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Para meter Value Uni t

STP 45NE06 ST P 45 N E0 6 F P

V

DS

Drain-source V olt age (VGS=0) 60 V

V

DGR

Drain- gate Voltage (RGS=20kΩ)

60 V

V

GS

Gat e- sourc e Volt age ± 20 V

I

D

Drain Current (con t inuous) at Tc=25oC4525A

I

D

Drain Current (con t inuous) at Tc=100oC 31 17.5 A

I

DM

(•) Drain Current (pul sed) 180 180 A

P

tot

Tot al D is sip at ion at Tc=25oC10035W
Derat in g Fac tor 0.67 0.23 W/

o

C

V

ISO

Ins ulation Withstand Voltage (D C)  2000 V

dv/ dt Peak Di ode Recovery volt age sl ope 7 V/ns

T

stg

Sto rage T emperat ur e -65 to 175

o

C

T

j

Max. Oper at in g J unction Te mperatu r e 175

o

C

(•) Pulse width limitedby safe operating area (1)ISD≤ 20 A,di/dt ≤ 300 A/µs, VDD≤ V

(BR)DSS,Tj≤TJMAX

TYPE V

DSS

R

DS(on)

I

D

STP45NE06
STP45NE06FP

60 V
60 V

<0.028Ω
<0.028Ω

45 A
25 A

June 1998

TO-220 TO-220FP

1

2

3

1

2

3

1/6

THERMAL DATA

TO - 2 20 TO-220F P

R

thj-case

Ther mal Resist ance Junctio n- case M ax 1.5 4.28

o

C/W

R

thj- amb

R

thc-sin k

T

l

Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Ty p
Maximum Lead Te mpera t u re Fo r Solderi ng P urpose

62.5

0.5

300

o

C/W

o

C/W

o

C

AVALANCHE CHARACTERISTICS

Symbol Paramete r Max Valu e Uni t

I

AR

Avalanch e Curre nt , Rep etit ive or Not-Re petitiv e
(pulse width limited by T

j

max)

45 A

E

AS

Single Pulse Avalanche Energy
(starting T

j

=25oC, ID=IAR,VDD=25V)

150 mJ

ELECTRICAL CHARACTERISTICS (T

case

=25oC unlessotherwise specified)

OFF

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

V

(BR)DSS

Drain-sou rc e
Breakdown Voltage

I

D

=250µAVGS=0

60 V

I

DSS

Zer o Gate V o lt age
Drain Cur re nt (V

GS

=0)

V

DS

=MaxRating

V

DS

=MaxRating Tc=125oC

1

10

µA
µA

I

GSS

Gat e-body Leaka ge
Current (V

DS

=0)

V

GS

= ± 20 V

± 100 nA

ON (∗)

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

V

GS(th )

Gate Threshold
Voltage

V

DS=VGSID

=250µA

234V

R

DS(on)

Stati c D rain-source On
Resistance

VGS=10V ID= 22.5A 0.022 0.028 Ω

I

D(on)

On St at e D ra in Cu rr e nt VDS>I

D(on)xRDS(on)max

VGS=10V

45 A

DYNAMIC

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

g

fs

(∗)Forward

Tr anscond uctanc e

VDS>I

D(on)xRDS(on)maxID

=22. 5 A 15 30 S

C

iss

C

oss

C

rss

Input Capaci t an c e
Out put Capac itanc e
Reverse T rans fer
Capa cit an c e

VDS=25V f=1MHz VGS= 0 2700

350

70

3600

480
100

pF
pF
pF

STP45NE06/FP

2/6

ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

t

d(on)

t

r

Turn-on T ime
Rise Time

VDD=30V ID= 22.5 A
R

G

=4.7 Ω VGS=10V

30

10040135

ns
ns

Q

g

Q

gs

Q

gd

Total Gate Charge
Gat e-Sou rc e Charge
Gate-Drain Charge

VDD=48V ID= 45A VGS=10V 60

18
17

80 nC

nC
nC

SWITCHINGOFF

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

t

r(Voff)

t

f

t

c

Of f - voltag e Rise Time
Fall Time
Cross-over T ime

VDD=48V ID=45A
R

G

=4.7 Ω VGS=10V

20
45
70

30
61
95

ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test C ondition s Min. Typ. Max. Un it

I

SD

I

SDM

(•)

Source-drain Current
Source-drain Current
(pulsed)

45

180

A
A

V

SD

(∗) Forward On Voltage ISD=45A VGS=0 1.5 V

t

rr

Q

rr

I

RRM

Reverse Recov ery
Time
Reverse Recov ery
Charge
Reverse Recov ery
Current

I

SD

= 4 5 A di/ dt = 100 A/µs

V

DD

=30V Tj=150oC

70

210

6

ns

µC

A

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

STP45NE06/FP

3/6

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

L6

A

C

D

E

D1

F

G

L7

L2

Dia.

F1

L5

L4

H2

L9

F2

G1

TO-220MECHANICAL DATA

P011C

STP45NE06/FP

4/6

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

L2

A

B

D

E

H

G

L6

¯

F

L3

G1

123

F2

F1

L7

L4

TO-220FP MECHANICAL DATA

STP45NE06/FP

5/6

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granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange withoutnotice. This publication supersedes andreplaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical componentsin life support devices or systems withoutexpress written approval of STMicroelectronics.

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STP45NE06/FP

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