Datasheet STP45NE06LFP, STP45NE06L Datasheet (SGS Thomson Microelectronics)

STP45NE06L

®

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP

TYPE V

STP45NE06L
STP45NE06LFP

■

TYPICAL R

■

EXCEPTIONAL dv/dt CAPABILITY

■

100% AVALANCHE TESTED

■

LOW GATE CHARGE 100 oC

■

LOW THRESHOLD DRIVE

DS(on)

DSS

60 V
60 V

= 0.022

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transi­stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re­markable manufacturing reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCH ING

■

SOLENOID AND RELAY DRIVERS

■

MOTOR CONTROL, AUDIO AMPLIFIERS

■

DC-DC & DC-AC CONVERTERS

R

DS(on)

< 0.028 Ω
< 0.028 Ω

Ω

I

D

45 A
25 A

STP45NE06LFP

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP45NE06L STP45NE06LFP

V

V

V

I

DM

P

V

dv/dt Peak Diode Recovery voltage slope 7 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤ 45 A, di/dt ≤ 300 A/µs, VDD ≤ V

June 1999

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc = 25 oC4525A

I

D

I

Drain Current (continuous) at Tc = 100 oC 31 17.5 A

D

60 V

(•) Drain Current (pulsed) 180 180 A

Total Dissipation at Tc = 25 oC 100 35 W

tot

Derating Factor 0.67 0.23 W/
Insulation Withstand Voltage (DC)  2000 V

ISO

Storage Temperature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/6

STP45NE06L/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERIST ICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 1.5 4.28
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

max)

j

DD

= 25V)

62.5

0.5

300

45 A

150 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

60 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= VGS ID = 250 µA

DS

VGS = 5 V ID = 22.5 A
V

= 10 V ID = 22.5 A

GS

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

1 1.7 2.5 V

0.024

0.022

45 A

0.03

0.028ΩΩ

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C
C
C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =22.5 A 15 30 S

90

3600

480
100

= 0 2370

GS

350

µA
µA

pF
pF
pF

2/6

STP45NE06L/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 30 V ID = 22.5 A

DD

=4.7

R
V

Ω

G

= 48 V ID = 45 A V

DD

VGS = 5 V

= 5 V 31

GS

37

100

13
13

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 48 V ID = 45 A

DD

=4.7 Ω VGS = 10 V

R

G

20
45
72

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current
(pulsed)

(∗) Forward On Voltage ISD =45 A VGS = 0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 45 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 150 oC

DD

90

225
Charge
Reverse Recovery

5

Current

50

135

42 nC

27
61

100

45

180

ns
ns

nC
nC

ns
ns
ns

A
A

ns

nC

Α

3/6

E

STP45NE06L/FP

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

4/6

A

C

D

D1

L2

F1

L5

Dia.

G1

F

F2

L9

G

H2

L7

L6

L4

P011C

TO-220FP MECHANICAL DAT A

STP45NE06L/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

5/6

STP45NE06L/FP

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not auth ori zed f or use as critical component s in life support devices or systems without exp r ess writt e n ap proval o f STM i cr oel ectronics.

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