Datasheet STP45NE06FP, STP45NE06 Datasheet (SGS Thomson Microelectronics)

STP45NE06

®

N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-2 20FP

TYPE V

STP45NE06
STP45NE06FP

■ TYPICAL R

■ EXCEPT ION AL dv/dt CAP AB ILI T Y

■ 100% AVALANCHE TESTED

■ LOW GATE CHARGE 100

■ APPLI CATION ORIENTED

DS(on)

DSS

60 V
60 V

= 0.022 Ω

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

R

DS(on)

< 0.028 Ω
< 0.028 Ω

o

C

I

D

45 A
25 A

STP45NE06FP

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTER NAL SCH E M ATI C DIAG RA M

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPE ED SWI TCHING

■ SOLENOID AND RELAY DRIVER S

■ MOTOR CONT RO L, AUDIO AM PLIFI ER S

■ DC-DC & DC-AC CONVERT E RS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP45NE06 STP45NE06FP

V

V

V

IDM(•) Drain Current (pulsed) 180 180 A

P

V

dv/dt Peak Diode Recovery voltage slope 7 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V

June 1998

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc = 25 oC4525A

D

I

Drain Current (continuous) at Tc = 100 oC 31 17.5 A

D

Total Dissipation at Tc = 25 oC10035W

tot

60 V

Derating Factor 0.67 0.23 W/
Insulation Withstand Voltage (DC)  2 000 V

ISO

Storage Temperature -65 to 175

stg

T

Max. Operating Junction Temperature 175

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/6

STP45NE06/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 1.5 4.28
Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 25V)

62.5

0.5

300

45 A

150 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

60 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

234V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID = 22.5A 0.022 0.028 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

45 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward

Transconductance

C

C

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =22.5 A 15 30 S

70

3600

480
100

= 0 2700

GS

350

µA
µA

pF
pF
pF

2/6

STP45NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Q
Q
Q

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Turn-on Time
Rise Time

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time
Fall Time

t

f

Cross-over Time

c

Source-drain Current

(•)

Source-drain Current

V

= 30 V ID = 22.5 A

DD

RG =4.7 Ω VGS = 10 V
VDD = 48 V ID = 45A V

V

= 48 V ID = 45 A

DD

=4.7 Ω VGS = 10 V

R

G

= 10 V 60

GS

30

10040135

80 nC
18
17

20
45
70

30

61

95

45

180

(pulsed)

(∗) Forward On Voltage ISD = 45 A VGS = 0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 45 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 150 oC

DD

70

210
Charge
Reverse Recovery

6

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

3/6

E

STP45NE06/FP

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

4/6

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

H2

G

F

F2

L4

P011C

TO-220FP MECHANICAL DAT A

STP45NE06/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

5/6

STP45NE06/FP

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